TYP1012, TYP212, TYP512 Selling Leads, Datasheet
MFG:ST Package Cooled:TO-220 D/C:04+
TYP1012, TYP212, TYP512 Datasheet download
Part Number: TYP1012
MFG: ST
Package Cooled: TO-220
D/C: 04+
TYP1012, TYP212, TYP512
- Table of contents:
Info of TYP1012
Info of TYP212
Info of TYP512
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About TYP1012
PDF/DataSheet Download
Datasheet: TYP1012
File Size: 68896 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TYP212
PDF/DataSheet Download
Datasheet: TYP212
File Size: 68896 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
About TYP512
PDF/DataSheet Download
Datasheet: TYP512
File Size: 68896 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
TYP1012 General Description
The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
TYP1012 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
IT(RMS) |
RMS on-state current (180° conduction angle) |
Tc=110°C
|
12 |
A |
|
IT(AV) |
Average on-state current (180° conduction angle, single phase circuit) |
Tc=110°C
|
8 |
A |
|
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) |
tp = 8.3 ms
|
315 |
A |
|
tp = 10 ms |
300 | |||
|
I2t |
I2t value |
tp = 10 ms
|
450 |
A2s |
|
ITM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form |
tp = 1 ms |
750 |
A |
|
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s |
100 |
A/s | |
|
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C °C | |
|
TI |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
260 |
°C | |
TYP1012 Features
· HIGH SURGE CURRENT CAPABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
TYP212 General Description
The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
TYP212 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
IT(RMS) |
RMS on-state current (180° conduction angle) |
Tc=110°C
|
12 |
A |
|
IT(AV) |
Average on-state current (180° conduction angle, single phase circuit) |
Tc=110°C
|
8 |
A |
|
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) |
tp = 8.3 ms
|
315 |
A |
|
tp = 10 ms |
300 | |||
|
I2t |
I2t value |
tp = 10 ms
|
450 |
A2s |
|
ITM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form |
tp = 1 ms |
750 |
A |
|
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s |
100 |
A/s | |
|
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C °C | |
|
TI |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
260 |
°C | |
TYP212 Features
· HIGH SURGE CURRENT CAPABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
TYP512 General Description
The TYP 212 ---> 1012 Family uses high performance glass passivated chips technology.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
These Silicon Controlled Rectifiers are designed for overvoltage protection in crowbar circuits application.
TYP512 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit | |
|
IT(RMS) |
RMS on-state current (180° conduction angle) |
Tc=110°C
|
12 |
A |
|
IT(AV) |
Average on-state current (180° conduction angle, single phase circuit) |
Tc=110°C
|
8 |
A |
|
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) |
tp = 8.3 ms
|
315 |
A |
|
tp = 10 ms |
300 | |||
|
I2t |
I2t value |
tp = 10 ms
|
450 |
A2s |
|
ITM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) Exponential pulse wave form |
tp = 1 ms |
750 |
A |
|
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/s |
100 |
A/s | |
|
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 125 |
°C °C | |
|
TI |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
260 |
°C | |
TYP512 Features
· HIGH SURGE CURRENT CAPABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
· HIGH dI/dtRATING
· HIGH STABILITY AND RELIABILITY
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