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TPCS8301, TPCS8302, TPCS8303

Table of contents:
Info of TPCS8301
Info of TPCS8302
Info of TPCS8303

TPCS8301, TPCS8302, TPCS8303 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:TSSOP8 D/C:05+

TPCS8301, TPCS8302, TPCS8303 Datasheet download

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Part Number: TPCS8301

MFG: TOSHIBA

Package Cooled: TSSOP8

D/C: 05+

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TPCS8302 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (R_GS = 20 k)		V_DGR	−20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	I_D	−5	A
Drain current	Pulse (Note 1)	I_DP	−20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_{D (1)}	1.1	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation (Note 3b)	P_{D (2)}	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_{D (1)}	0.6	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation (Note 3b)	P_{D (2)}	0.35	W
Single pulse avalanche energy (Note 4)		E_AS	32.5	mJ
Avalanche current		I_AR	−5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.075	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55~150

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

TPCS8302 Typical Application

• Small footprint due to small and thin package
• Low drain-source ON resistance: R_{DS (ON)} = 22 m (typ.)
• High forward transfer admittance: |Y_fs| = 12 S (typ.)
• Low leakage current: I_DSS = −10 A (max) (V_DS = −20 V)
• Enhancement mode: V_th = −0.5~−1.2 V (V_DS = −10 V, I_D = −200 A)

TPCS8303 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	−20	V
Drain-gate voltage (RGS = 20 k)		V_DGR	−20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	I_D	−5	A
Drain current	Pulse (Note 1)	I_DP	−20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D ₍₁₎	1.1	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation (Note 3b)	P_{D (2)}	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_{D (1)}	0.6	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation (Note 3b)	P_{D (2)}	0.35	W
Single pulse avalanche energy (Note 4)		E_AS	16.3	mJ
Avalanche current		I_AR	−5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.075	mJ
Channel temperature		T_ch	150
Storage temperature range		T_stg	−55~150

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.

TPCS8303 Typical Application

• Small footprint due to small and thin package
• Low drain-source ON resistance: R_DS (ON) = 15 m (typ.)
• High forward transfer admittance: |Yfs| = 18 S (typ.)
• Low leakage current: I_DSS = −10 A (_max) (V_DS = −20 V)
• Enhancement mode: Vth = −0.45~−1.2 V (V_DS = −10 V, ID = −200 A)

TPCS8303 Connection Diagram

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