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TPC6001

Features: • Low drain-source ON resistance: R DS (ON) = 22 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A)Specifications Characteristic...

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TPC6001: Features: • Low drain-source ON resistance: R DS (ON) = 22 m (typ.)• High forward transfer admittance: |Yfs| = 15 S (typ.)• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)̶...

TPC6001 Data Sheet

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Part Number:
TPC6001
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low drain-source ON resistance: R DS (ON) = 22 m (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 A)


Specifications

Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
20
V
Drain-gate voltage (RGS = 20 k)
VDGR
20
V
Gate-source voltage
VGSS
±12
V
Drain current
DC (Note 1)
ID
6
A
Pulse (Note 1)
IDP
24
Drain power dissipation (t = 5s)
(Note 2a)
PD
2.2
W
Drain power dissipation (t =5 s)
(Note 2a)
PD
0.7
W
Single pulse avalanche energy (Note3)
EAS
5.8
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy
(Note 4)
EAR
0.22
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C

Note: Note 1, Note 2, Note 3, Note 4  and Note 5:See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..




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