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Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)
EAR
0.075
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.
TPCS8211 Features
`Small footprint due to small and thin package `Low drain-source ON resistance: R DS (ON) = 16 m (typ.) `High forward transfer admittance: |Yfs| = 11 S (typ.) `Low leakage current: IDSS = 10 A (max) (VDS = 20 V) `Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A)