TPCR106M016R1800, TPCS8004, TPCS8101(TE12L) Selling Leads, Datasheet
MFG:AVX Package Cooled:SMD D/C:2008+
TPCR106M016R1800, TPCS8004, TPCS8101(TE12L) Datasheet download
Part Number: TPCR106M016R1800
MFG: AVX
Package Cooled: SMD
D/C: 2008+
TPCR106M016R1800, TPCS8004, TPCS8101(TE12L)
- Table of contents:
Info of TPCR106M016R1800
Info of TPCS8004
Info of TPCS8101(TE12L)
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPCS8004
PDF/DataSheet Download
Datasheet: TPCS8004
File Size: 238998 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCS8004 Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
Drain-source voltage |
VDSS |
200 |
V | |
|
Drain-gate voltage (RGS = 20 k) |
VDGR |
200 |
V | |
|
Gate-source voltage |
VGSS |
±20 |
V | |
|
Drain current |
DC (Note 1) |
ID |
1.3 |
A |
|
Pulse (Note 1) |
IDP |
5.2 | ||
|
Drain power dissipation (t = 5 s) (Note 2a) |
PD |
1.5 |
W | |
|
Drain power dissipation (t = 10 s) (Note 2a) |
PD |
0.6 |
W | |
|
Single pulse avalanche energy (Note3) |
EAS |
1.05 |
mJ | |
|
Avalanche current |
IAR |
1.3 |
A | |
|
Repetitive avalanche energy (Note 4) |
EAR |
0.15 |
mJ | |
|
Channel temperature |
Tch |
150 |
°C | |
|
Storage temperature range |
Tstg |
−55~150 |
°C | |
Note: Note 1, Note 2, Note 3, Note 4 See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..
TPCS8004 Features
• Small footprint due to small and thin package
• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
• Low drain-source ON resistance: R DS (ON) = 0.56 (typ.)
• High forward transfer admittance: |Yfs| = 1.8 S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 200 V)
• Enhancement model: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
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