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TPCP8002, TPCP8101, TPCP820

Table of contents:
Info of TPCP8002
Info of TPCP8101
Info of TPCP820

TPCP8002, TPCP8101, TPCP820 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOT-283 D/C:07+NOPB

TPCP8002, TPCP8101, TPCP820 Datasheet download

Five Points

Part Number: TPCP8002

MFG: TOSHIBA

Package Cooled: SOT-283

D/C: 07+NOPB

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TPCP8002 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	20	V
Drain?gate voltage (RGS = 20 k)		V_DGR	20	V
Gate?source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	I_D	9.1	A
Drain current	Pulse (Note 1)	I_DP	36.4	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	1.68	W
Drain power dissipation (t = 5 s) (Note 2b)		P_D	0.84	W
Single pulse avalanche energy (Note 3)		E_AS	21.5	mJ
Avalanche current		I_AR	9.1	A
Repetitive avalanche energy (Note 4)		E_AR	0.168	mJ
Channel temperature		T_ch	150
Storage temperature range		T_STG	-55 ~ 150

Note: For Notes 1 to 5, refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)

TPCP8002 Typical Application

• Lead (Pb)-Free
• Small footprint due to small and thin package
• Low drain-source ON-resistance
: R_{DS (ON)} = 7 m (typ.)
• High forward transfer admittance
:|Y_fs| = 36 S (typ.)
• Low leakage current
: I_DSS = 10 A (V_DS= 20 V)
• Enhancement mode
: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 0.2 mA)

TPCP8002 Connection Diagram

TPCP8101 Maximum Ratings

Parameter		Symbol	Rating	Unit
Drain-Source Voltage		V_DSS	-20	V
Drain-gate voltage (RGS = 20 k)		V_DGR	-20	V
Gate-Source Voltage		V_GSS	±8	V
Drain Current	DC (Note 1)	I_D	-5.6	A
Drain Current	Pulse (Note 1)	I_DP	-22.4	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	1.68	W
Drain power dissipation (t = 5 s) (Note 2b)		P_D	0.84	W
Single-pulse avalanche energy (Note 3)		E_AS	20.3	mJ
Avalanche current		I_AR	-5.6	A
Repetitive avalanche energy (Note 4)		E_AR	0.168	mJ
Channel temperature		T_ch	150
Storage temperature range		T_J, T_STG	-55~150

Note: For Notes 1 to 5, refer to the next page.
          Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and
          the significant change in temperature, etc.) may cause this product to decrease in the reliability
          significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within
          the absolute maximum ratings. Please design the appropriate reliability upon reviewing the
          Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods)
          and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

TPCP8101 Features

• Small footprint due to small and thin package
• Low drain-source ON-resistance: R_{DS (ON)} = 24 m (typ.)
• High forward transfer admittance: |Yfs| = 14 S (typ.)
• Low leakage current: I_DSS= -10 A (max) (V_DS = -20 V)
• Enhancement model: V_th = -0.5 to -1.2 V
(V_DS = -10 V, I_D = -200 A)

TPCP8101 Connection Diagram

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