TPCF8301, TPCF8302/F5B, TPCF8303 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOT-283 D/C:06+NOP
TPCF8301, TPCF8302/F5B, TPCF8303 Datasheet download
Part Number: TPCF8301
MFG: TOSHIBA
Package Cooled: SOT-283
D/C: 06+NOP
TPCF8301, TPCF8302/F5B, TPCF8303
- Table of contents:
Info of TPCF8301
Info of TPCF8302/F5B
Info of TPCF8303
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCF8301 Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -20 | V |
| Collector-emitter voltage | VCEO | -12 | V |
| Emitter-base voltage | VEBO | -7.5 | V |
| Peak Pulse Current | ICM | -12 | A |
| Continuous Collector Current (a) | IC | -4 | A |
| Base current | IB | -1000 | mA |
| Power Dissipation at TA=25 (a) Linear Derating Factor |
PD | 1.5 12 |
W mW/ |
| Power Dissipation at TA=25 (b) Linear Derating Factor |
PD | 2.45 19.6 |
W mW/ |
| Power Dissipation at TA=25 (d) Linear Derating Factor |
PD | 18 | W mW/ |
| Power Dissipation at TA=25 (e) Linear Derating Factor |
PD | 3 24 |
W mW/ |
| Junction temperature | Tj:Tstg | -55 to +150 |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
TPCF8301 Features
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
• High forward transfer admittance: |Yfs| = 4.7 S (typ.)
• Low leakage current: IDSS = −10 A (max) (VDS = −20 V)
• Enhancement model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 A)
TPCF8301 Connection Diagram
TPCF8303 Maximum Ratings
| Characteristics | Symbol | Rating | Unit | |
| Drain-source voltage | VDSS | -20 | V | |
| Drain-gate voltage (RGS = 20 k) | VDGR | -20 | V | |
| Gate-source voltage | VGSS | ±8 | V | |
| Drain current | DC (Note 1) | ID | -3.0 | A |
| Pulse (Note 1) | IDP | -12 | ||
| Drain power dissipation (t = 5 s) (Note 2a) |
Single-device operation (Note 3a) | PD (1) | 1.35 | W |
| Single-device value at dual operation (Note 3b) |
PD (2) | 1.12 | ||
| Drain power dissipation (t = 5 s) (Note 2b) |
Single-device operation(Note 3a) |
PD (1) | 0.53 | |
| Single-device value at dual operation (Note 3b) |
PD (2) | 0.33 | ||
| Single pulse avalanche energy (Note 4) | EAS | 0.58 | mJ | |
| Avalanche current | IAR | -1.5 | A | |
| Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) |
EAR | 0.11 | mJ | |
| Channel temperature | Tch | 150 | ||
| Storage temperature range | Tstg | -55~150 | ||
Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6),please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
TPCF8303 Connection Diagram
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