TPCA8004-H, TPCA8004-H(LE12LQM), TPCA8005 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOP8 D/C:08+
TPCA8004-H, TPCA8004-H(LE12LQM), TPCA8005 Datasheet download
Part Number: TPCA8004-H
MFG: TOSHIBA
Package Cooled: SOP8
D/C: 08+
TPCA8004-H, TPCA8004-H(LE12LQM), TPCA8005
- Table of contents:
Info of TPCA8004-H
Info of TPCA8004-H(LE12LQM)
Info of TPCA8005
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About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
About TPC-02026
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
TPCA8004-H Maximum Ratings
|
Characteristics |
Symbol |
Rating |
Unit | |
|
Drain-source voltage |
VDSS |
30 |
V | |
|
Drain-gate voltage (RGS = 20 k) |
VDGR |
30 |
V | |
|
Gate-source voltage |
VGSS |
±20 |
V | |
|
Drain current |
DC (Note 1) |
ID |
40 |
A |
|
Pulsed (Note 1) |
IDP |
120 | ||
|
Drain power dissipation (Tc=25) |
PD |
45 |
W | |
|
Drain power dissipation (t = 10 s) |
PD |
2.8 |
W | |
|
Drain power dissipation (t = 10 s) |
PD |
1.6 |
W | |
|
Single pulse avalanche energy |
EAS |
208 |
mJ | |
|
Avalanche current |
IAR |
40 |
A | |
|
Repetitive avalanche energy |
EAR |
4.5 |
mJ | |
|
Channel temperature |
Tch |
150 |
||
|
Storage temperature range |
Tstg |
−55 to 150 |
||
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
TPCA8004-H Features
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg =37 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)
• High forward transfer admittance: |Yfs| =80 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
• High speed switching
• Small gate charge: Qg =37 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 3.5 m (typ.)
• High forward transfer admittance: |Yfs| =80 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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