TPC8301-TE12L, TPC8302, TPC8303 Selling Leads, Datasheet
MFG:TOS Package Cooled:99+ D/C:08+
TPC8301-TE12L, TPC8302, TPC8303 Datasheet download
Part Number: TPC8301-TE12L
MFG: TOS
Package Cooled: 99+
D/C: 08+
MFG:TOS Package Cooled:99+ D/C:08+
TPC8301-TE12L, TPC8302, TPC8303 Datasheet download
MFG: TOS
Package Cooled: 99+
D/C: 08+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC8302
File Size: 461500 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC8303
File Size: 532853 KB
Manufacturer: TOSHIBA [Toshiba Semiconductor]
Download : Click here to Download
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−20 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
−20 |
V | |
Gate-source voltage |
VGSS |
±12 |
V | |
Drain current |
DC (Note 1) |
ID |
-3.5 |
A |
Pulse (Note 1) |
IDP |
-14 | ||
Drain power |
Single-device operation |
PD (1) |
1.5 |
W |
Single-device value at |
PD (2) |
1.0 |
W | |
Drain power |
Single-device operation |
PD (1) |
0.75 |
W |
Single-device value at |
PD (2) |
0.45 | ||
Single pulse avalanche energy (Note 4) |
EAS |
16 |
mJ | |
Avalanche current |
IAR |
-3.5 |
A | |
Repetitive avalanche energy |
EAR |
0.1 |
mJ | |
Channel temperature |
Tch |
150 |
°C | |
Storage temperature range |
Tstg |
−55~150 |
°C |
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
Characteristics |
Symbol |
Rating |
Unit | |
Drain-source voltage |
VDSS |
−30 |
V | |
Drain-gate voltage (RGS = 20 k) |
VDGR |
−30 |
V | |
Gate-source voltage | VGSS | ±20 | V | |
Drain current | DC (Note 1) | ID | −4.5 | A |
Pulse (Note 1) | IDP | −18 | ||
Drain power dissipation (t = 5 s) (Note 2a) |
Single-device operation (Note 3a) |
PD (1) | 1.5 | W |
Single-device value at dual operation(Note 3b) |
PD (2) | 1.0 | W | |
Drain power dissipation (t = 5 s) (Note 2b) |
Single-device operation (Note 3a) |
PD (1) | 0.75 | W |
Single-device value at dual operation(Note 3b) |
PD (2) | 0.45 | ||
Single pulse avalanche energy (Note 4) | EAS | 26 | mJ | |
Avalanche current | IAR | −4.5 | A | |
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) |
EAR | 0.10 | mJ | |
Channel temperature | Tch | 150 | °C | |
Storage temperature range | Tstg | −55~150 | °C |
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.