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TPC8207(TE12L), TPC8208, TPC8209

Table of contents:
Info of TPC8207(TE12L)
Info of TPC8208
Info of TPC8209

TPC8207(TE12L), TPC8208, TPC8209 Selling Leads, Datasheet

MFG:Toshiba (VA) Category:Discrete Semiconductor Products Package Cooled:SOP8P D/C:2004

TPC8207(TE12L), TPC8208, TPC8209 Datasheet download

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Part Number: TPC8207(TE12L)

Category: Discrete Semiconductor Products

MFG: Toshiba (VA)

Package Cooled: SOP8P

D/C: 2004

Description: MOSFET N-CH 20V 6A 8-SOP

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TPC8207(TE12L) Parameters

Technical/Catalog Information	TPC8207(TE12L)
Vendor	Toshiba (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	6A
Rds On (Max) @ Id, Vgs	20 mOhm @ 4.8A, 4V
Input Capacitance (Ciss) @ Vds	2010pF @ 10V
Power - Max	750mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	22nC @ 5V
Package / Case	8-SOP
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	TPC8207 TE12L TPC8207TE12L TPC8207DKR ND TPC8207DKRND TPC8207DKR

TPC8208 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	5	A
Drain current	Pulse (Note 1)	I_DP	20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	16.3	mJ
Avalanche current		I_AR	5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8208 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 38 m (typ.)
`High forward transfer admittance: |Yfs| = 6.3 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 20 V)
`Enhancement-mode: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 200 A)

TPC8209 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	5	A
Drain current	Pulse (Note 1)	I_DP	20	A
Drain power dissipation (t = 10 s) (Note 2a)	Single-device operation (Note 3a)	P_D (1)	1.5	W
Drain power dissipation (t = 10 s) (Note 2a)	Single-device value at dual operation(Note 3b)	P_D (2)	1.1	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device operation (Note 3a)	P_D (1)	0.75	W
Drain power dissipation (t = 10 s) (Note 2b)	Single-device value at dual operation(Note 3b)	P_D (2)	0.45	W
Single pulse avalanche energy (Note 4)		E_AS	32.5	mJ
Avalanche current		I_AR	5	A
Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)		E_AR	0.1	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: (Note 1), (Note 2), (Note 3), (Note 4), Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution.

TPC8209 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} =30 m (typ.)
`High forward transfer admittance: |Yfs| =10S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 30 V)
`Enhancement-mode: V_th = 1.3 to 2.5V (V_DS = 10 V, I_D =1 mA)

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