TPC6104(S3D), TPC6104-TE85L, TPC6105 Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOT23 6 D/C:05+PB
TPC6104(S3D), TPC6104-TE85L, TPC6105 Datasheet download
Part Number: TPC6104(S3D)
MFG: TOSHIBA
Package Cooled: SOT23 6
D/C: 05+PB
MFG:TOSHIBA Package Cooled:SOT23 6 D/C:05+PB
TPC6104(S3D), TPC6104-TE85L, TPC6105 Datasheet download
MFG: TOSHIBA
Package Cooled: SOT23 6
D/C: 05+PB
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PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TPC-02026
File Size: 454219 KB
Manufacturer: MICRO-ELECTRONICS [Micro Electronics]
Download : Click here to Download
Here is the description about TPC6105 of the TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III).
Here are its maximum ratings. The Drain-source voltage is -20V. The Drain-gate voltage (RGS 20k?) is -20V. The Gate-source voltage is ±8V. The Drain current: DC (Note 1) is -2.7A; Pulse (Note 1) is -10.8A. Drain power dissipation (t=5 s) (Note 2a) is 2.2W.The Drain power dissipation (t=5 s) (Note 2b) is 0.7W. Single pulse avalanche energy (Note 3) is 1.2mJ. The Avalanche current is -1.35A. The Repetitive avalanche energy (Note 4) is 0.22mJ. The Channel temperature is 150°C. The Storage temperature range is -55~150°C.
Here are the notes. Note 1: Ensure that the channel temperature does not exceed 150. Note 2: (a) Device mounted on a glass-epoxy board (a) (t=5s);(b) Device mounted on a glass-epoxy board (b) (t=5 s). Note 3: VDD =-16 V, Tch=25°C (initial), L=0.5 mH, RG=25?, IAR=-1.35A. Note 4: Repetitive rating: pulse width limited by maximum channel temperature. Note 5: on the lower left of the marking indicates Pin 1.
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