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TPC6002, TPC6003, TPC6004

Table of contents:
Info of TPC6002
Info of TPC6003
Info of TPC6004

TPC6002, TPC6003, TPC6004 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOT23 D/C:07+PB

TPC6002, TPC6003, TPC6004 Datasheet download

Five Points

Part Number: TPC6002

MFG: TOSHIBA

Package Cooled: SOT23

D/C: 07+PB

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TPC6002 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	6	A
Drain current	Pulse (Note 1)	I_DP	24	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	5.8	mJ
Avalanche current		I_AR	3	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

TPC6002 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 25 m (typ.)
`High forward transfer admittance: |Yfs| =10 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 30 V)
`Enhancement-mode: V_th = 1.3 to 2.5V (V_DS = 10 V, I_D =1 A)

TPC6003 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	30	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	30	V
Gate-source voltage		V_GSS	±20	V
Drain current	DC (Note 1)	_ID	6	A
Drain current	Pulse (Note 1)	I_DP	24	A
Drain power dissipation (t = 5 s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 10 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	5.8	mJ
Avalanche current		I_AR	3	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

TPC6003 Features

`Small footprint due to small and thin package
`Low drain-source ON resistance: R_{DS (ON)} = 19 m (typ.)
`High forward transfer admittance: |Yfs| = 7 S (typ.)
`Low leakage current: I_DSS = 10 A (max) (V_DS = 30V)
`Enhancement-mode: V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 A)

TPC6004 Maximum Ratings

Characteristics		Symbol	Rating	Unit
Drain-source voltage		V_DSS	20	V
Drain-gate voltage (R_GS= 20 k)		V_DGR	20	V
Gate-source voltage		V_GSS	±12	V
Drain current	DC (Note 1)	_ID	6	A
Drain current	Pulse (Note 1)	I_DP	24	A
Drain power dissipation (t = 5s) (Note 2a)		P_D	2.2	W
Drain power dissipation (t = 5 s) (Note 2a)		P_D	0.7	W
Single pulse avalanche energy (Note3)		E_AS	5.8	mJ
Avalanche current		I_AR	3	A
Repetitive avalanche energy (Note 4)		E_AR	0.22	mJ
Channel temperature		_Tch	150	°C
Storage temperature range		T_stg	−55~150	°C

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution..

TPC6004 Features

• Low drain-source ON resistance: R_{DS (ON)} = 19 m (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: I_DSS = 10 A (max) (V_DS = 20 V)
• Enhancement mode: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 200 A)

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