TK08FW, TK08MW, TK09H90A Selling Leads, Datasheet
MFG:0 Package Cooled:07+ D/C:188
TK08FW, TK08MW, TK09H90A
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Info of TK08FW
Info of TK08MW
Info of TK09H90A
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About TK07H90A
PDF/DataSheet Download
Datasheet: TK07H90A
File Size: 252204 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
About TK07H90A
PDF/DataSheet Download
Datasheet: TK07H90A
File Size: 252204 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
About TK09H90A
PDF/DataSheet Download
Datasheet: TK09H90A
File Size: 251959 KB
Manufacturer: Toshiba Semiconductor
Download : Click here to Download
TK09H90A Maximum Ratings
| Characteristic |
Symbol |
Rating |
Unit | |
| Drain−source voltage |
VDSS |
900 |
V | |
| Drain−gate voltage (RGS = 20 k) |
VDGR |
900 |
V | |
| Gate−source voltage |
VGSS |
±30 |
V | |
| Drain current | DC (Note 1) |
ID |
9 |
A |
| Pulse (Note 1) |
IDP |
27 |
A | |
| Drain power dissipation (Tc = 25°C) |
PD |
150 |
W | |
| Single-pulse avalanche energy (Note 2) |
EAS |
778 |
mJ | |
| Avalanche current |
IAR |
8 |
A | |
| Repetitive avalanche energy (Note 3) |
EAR |
15 |
mJ | |
| Channel temperature |
Tch |
150 |
||
| Storage temperature range |
Tstg |
−55~150 |
||
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
TK09H90A Typical Application
` Low drain−source ON resistance : RDS (ON) = 1.0 (typ.)
` High forward transfer admittance : |Yfs| =6.0 S (typ.)
` Low leakage current : IDSS = 100 A (max) (VDS = 720V)
` Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
` High forward transfer admittance : |Yfs| =6.0 S (typ.)
` Low leakage current : IDSS = 100 A (max) (VDS = 720V)
` Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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