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TC7WG04FK, TC7WG04FU, TC7WG08FC

Table of contents:
Info of TC7WG04FK
Info of TC7WG04FU
Info of TC7WG08FC

TC7WG04FK, TC7WG04FU, TC7WG08FC Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:US-9 D/C:2008+

TC7WG04FK, TC7WG04FU, TC7WG08FC Datasheet download

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Part Number: TC7WG04FK

MFG: TOSHIBA

Package Cooled: US-9

D/C: 2008+

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TC7WG04FK Maximum Ratings

Characteristics	Symbol	Ratingh	Unit
Power supply viltage	V_CC	−0.5~4.6	V
DC input voltage	V_IN	−0.5~7.0	V
DC output voltage	V_OUT	−0.5~4.6 (Note 1)	V
DC output voltage	V_OUT	−0.5~V_CC + 0.5 (Note 2)	V
Input diode current	I_IK	−20	mA
Output diode current	I_OK	−20 (Note 3)	mA
DC output current	I_OUT	±25	mA
DC V_CC/GND current	I_CC	±50	mA
Power dissipation	P_D	300 (SM8) 200 (US8)	mW
Storage temperature	T_stg	−65~150	°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low State. I_OUT absolute maximum rating must be observed.
Note 3: V_OUT < GND

TC7WG04FK Features

• High-level output current: I_OH/I_OL = ±8 mA (min)
at V_CC = 3 V
• High-speed operation: t_pd = 2.7 ns (typ.)
at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

TC7WG04FK Connection Diagram

TC7WG04FU Maximum Ratings

Characteristics	Symbol	Ratingh	Unit
Power supply viltage	V_CC	−0.5~4.6	V
DC input voltage	V_IN	−0.5~7.0	V
DC output voltage	V_OUT	−0.5~4.6 (Note 1)	V
DC output voltage	V_OUT	−0.5~V_CC + 0.5 (Note 2)	V
Input diode current	I_IK	−20	mA
Output diode current	I_OK	−20 (Note 3)	mA
DC output current	I_OUT	±25	mA
DC V_CC/GND current	I_CC	±50	mA
Power dissipation	P_D	300 (SM8) 200 (US8)	mW
Storage temperature	T_stg	−65~150	°C

TC7WG04FU Features

TC7WG04FU Connection Diagram

TC7WG08FC Maximum Ratings

Characteristic	Symbol	Value	Unit
Power supply voltage	V_CC	−0.5~4.6	V
DC input voltage	V_IN	−0.5~7.0	V
DC output voltage	V_OUT	−0.5~4.6 (Note 1) −0.5~V_CC+ 0.5 (Note 2)	V
Input diode current	I_IK	−20	mA
Output diode current	I_OK	−20 (Note 3)	mA
DC output current	I_OUT	±25	mA
DC VCC/GND current	I_CC	±50	mA
Power dissipation	P_D	150 (Note 4)	mW
Storage temperature	T_stg	−65~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: V_CC = 0V
Note 2: High or Low State. IOUT absolute maximum rating must be observed.
Note 3: V_OUT < GND Note 4: Mounted on an FR4 board. (25.4 mm * 25.4 mm * 1.6 t, Cu Pad: 11.56 mm²)

TC7WG08FC Features

• High-level output current: IOH/IOL = ±8 mA (min) at V_CC = 3 V
• High-speed operation: tpd = 2.5 ns (typ.) at V_CC = 3.3 V,15pF
• Operating voltage range: V_CC = 0.9~3.6 V
• 5.5-V tolerant inputs
• 3.6-V power down protection outputs

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