TC7SP4FU, TC7SPN3125TU, TC7ST02FU(F3) Selling Leads, Datasheet
MFG:TOSHIBA Package Cooled:SOT26/SOT363 D/C:09+
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TC7SP4FU, TC7SPN3125TU, TC7ST02FU(F3) Datasheet download
Part Number: TC7SP4FU
MFG: TOSHIBA
Package Cooled: SOT26/SOT363
D/C: 09+
MFG:TOSHIBA Package Cooled:SOT26/SOT363 D/C:09+
TC7SP4FU, TC7SPN3125TU, TC7ST02FU(F3) Datasheet download
MFG: TOSHIBA
Package Cooled: SOT26/SOT363
D/C: 09+
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PDF/DataSheet Download
Datasheet: TC70
File Size: 92092 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC70
File Size: 92092 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC70
File Size: 92092 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
The TC7SPN3125 is a dual supply, advanced high-speed CMOS 1-bit dual supply voltage interface bus buffer fabricated with silicon gate CMOS technology.
It is also designed with over voltage tolerant inputs and outputs up to 3.6 V.
Designed for use as an interface between a 1.2-V, 1.5-V, 1.8-V, or 2.5-V bus and a 1.8-V, 2.5-V or 3.6-V bus in mixed 1.2-V, 1.5-V, 1.8-V or 2.5-V/1.8-V, 2.5-V or 3.6-V supply systems.
The A-input interfaces with the 1.2-V, 1.5-V, 1.8-V or 2.5-V bus, the B-output with the 1.8-V, 2.5-V, 3.3-V bus.
The enable input (OE) can be used to disable the device so that the signal lines are effectively isolated.
All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Characteristics | Symbol | Rating | Unit |
Power supply voltage (Note 2) | VCCA | −0.5 to 4.6 | V |
VCCB | −0.5 to 4.6 | V | |
DC input voltage (A1, OE ) |
VIN | −0.5 to 4.6 | V |
DC output voltage −0.5 to 4.6 (Note 3) (B1) |
VOUTB | −0.5 to 4.6(Note 3) | V |
−0.5 to VCCB + 0.5 (Note 4) | |||
Input diode current | IIk | -25 | mA |
Output diode current | IOK | ±50 (Note 5) | mA |
DC output current | IOUTB | ±6 | mA |
DC VCC/ground current per supply pin | ICCA | ±25 | mA |
ICCB | ±50 | mA | |
Power dissipation | PD | 100 | mW |
Storage temperature | Tstg | −65 to 150 |