MFG:TOS Package Cooled:SOIC/2K D/C:2000
TC74HCT02AF(EL), TC74HCT02AFN(ELF M, TC74HCT02AP Datasheet download
MFG: TOS
Package Cooled: SOIC/2K
D/C: 2000
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PDF/DataSheet Download
Datasheet: TC70
File Size: 92092 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC70
File Size: 92092 KB
Manufacturer: TELCOM [TelCom Semiconductor, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: TC74HCT02AP
File Size: 197191 KB
Manufacturer: Toshiba
Download : Click here to Download
The TC74HCT02AP is designed as a high speed CMOS 2-input NOR gate fabricated with silicon gate C2MOS technology.
It has eight features. (1)High speed which would be typ 9ns at Vcc=5V. (2)Low power dissipation which means Icc=1uA max at Ta=25°C. (3)Compatible with TTL outputs which means 2V min for high and 0.8V max for low. (4)Wide interfacing ability LSTTL, NMOS, CMOS. (5)Output drive capability 10 LSTTL loads. (6)Symmetrical output impedance which would be 4mA min. (7)Balanced propagation delays. (8)Pin and function compatible with 74LS02. Those are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1)Its supply voltage range would be from -0.5V to 7.0V. (2)Its DC input voltage would be from -0.5V to Vcc+0.5V. (3)Its DC output voltage would be from -0.5V to Vcc+0.5V. (4)Its input diode current would be +/-20mA. (5)Its output diode current would be +/-20mA. (6)Its DC output current would be +/-25mA. (7)Its DC Vcc/ ground current would be +/-50mA. (8)Its power dissipation would be 500mW. (9)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some DC electrical characteristics at Vcc=4.5V are concluded as follow. (1)Its high level input voltage would be min 2.0V. (2)Its low level input voltage would be max 0.8V. (3)Its high level output voltage would be min 4.4V and typ 4.5V at Ioh=-20uA and would be min 4.18V and typ 4.31V at Ioh=-4mA. (4)Its low level output voltage would be max 0.1V at Iol=20uA and would be max 0.26V at Iol=4mA.
It should be noted that toshiba is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the users, when utilizing these products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a product could cause loss of human life, bodily injury or damage to property. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!
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