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TC74HC133AF, TC74HC133AP, TC74HC133F

Table of contents:
Info of TC74HC133AF
Info of TC74HC133AP
Info of TC74HC133F

TC74HC133AF, TC74HC133AP, TC74HC133F Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:SOP-18 D/C:04+

TC74HC133AF, TC74HC133AP, TC74HC133F Picture

TC74HC133AF, TC74HC133AP, TC74HC133F Datasheet download

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Part Number: TC74HC133AF

MFG: TOSHIBA

Package Cooled: SOP-18

D/C: 04+

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TC74HC133AP General Description

The TC74HC133AP is designed as a high speed CMOS 13 input NAND gate fabricated with silicon gate C2MOS technology.

It has eight features. (1)High speed which would be typ 13ns at Vcc=5V. (2)Low power dissipation which means Icc=1uA max at Ta=25°C. (3)High noise immunity which would be min 28%Vcc. (4)Output drive immunity 10 LSTTL loads. (5)Symmetrical output impedance which would be 4mA min. (6)Balanced propagation delays. (7)Wide operating voltage range which would be from 2V to 6V. (8)Pin and function compatible with 74LS133. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its supply voltage range would be from -0.5V to 7.0V. (2)Its DC input voltage would be from -0.5V to Vcc+0.5V. (3)Its DC output voltage would be from -0.5V to Vcc+0.5V. (4)Its input diode current would be +/-20mA. (5)Its output diode current would be +/-20mA. (6)Its DC output current would be +/-25mA. (7)Its DC Vcc/ ground current would be +/-75mA. (8)Its power dissipation would be 500mW. (9)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some DC electrical characteristics at Vcc=4.5V are concluded as follow. (1)Its high level input voltage would be min 3.15V. (2)Its low level input voltage would be max 1.35V. (3)Its high level output voltage would be min 4.4V and typ 4.5V at Ioh=-20uA and would be min 4.18V and typ 4.31V at Ioh=-4mA. (4)Its low level output voltage would be max 0.1V at Iol=20uA and would be max 0.26V at Iol=4mA.

It should be noted that toshiba is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the users, when utilizing these products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a product could cause loss of human life, bodily injury or damage to property. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!

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