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TC58DAM72F1FT00, TC58DCM82A1FT, TC58DDM92F1XGJ5

Table of contents:
Info of TC58DAM72F1FT00
Info of TC58DCM82A1FT
Info of TC58DDM92F1XGJ5

TC58DAM72F1FT00, TC58DCM82A1FT, TC58DDM92F1XGJ5 Selling Leads, Datasheet

MFG:TOSHIB Package Cooled:TSOP48 D/C:N/A

TC58DAM72F1FT00, TC58DCM82A1FT, TC58DDM92F1XGJ5 Picture

TC58DAM72F1FT00, TC58DCM82A1FT, TC58DDM92F1XGJ5 Datasheet download

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Part Number: TC58DAM72F1FT00

MFG: TOSHIB

Package Cooled: TSOP48

D/C: N/A

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TC58DAM72F1FT00 General Description

The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes/264 words u 32 pages u 1024 blocks. The device uses dual power supplies (2.7 V to 3.6 V for VCC and 1.65 V to 1.95 V for VCCQ ). The device has a 528-byte/264-words static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte/256-words increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes u 32 pages/8k words + 256 words:264 words x 32 pages).

The TC58DxM72x1xxxx is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.

TC58DAM72F1FT00 Maximum Ratings

SYMBOL	RATING	VALUE		unit
SYMBOL	RATING	TC58DVxxxxx	TC58DAxxxx	unit
VCC	Power Supply Voltage	-0.6~4.6	-0.6~4.6	V
VCCQ	I/O port Power Supply Voltage	-0.6~4.6	-0.6~2.6	V
VIN	Input Voltage for Control pins	-0.6~4.6	-0.6~2.6	V
VI/O	Input/Output Voltage for I/O pins	-0.6 V~VCCQ 0.3 V ( 4.6 V)	-0.6 V~VCCQ 0.3 V ( 2.6 V)	W
PD	Power Dissipation	0.3	0.3
Tsolder	Soldering Temperature(10s)	260	260	°C
Tstg	Storage Temperature	-55~150	55~150	°C
Topr	Operating Temperature	0~70	0~70	°C

TC58DAM72F1FT00 Features

Organization            TC58DxM72A1xxxx      TC58DxM72F1xxxx
   Memory cell allay      528 u 32K u 8             264 x 32k x 16
   Register                   528 u 8                      264 x 16
   Page size                 528 bytes                  264 words
   Block size                 (16K 512) bytes    (8k + 256) words
Modes
   Read, Reset, Auto Page Program
   Auto Block Erase, Status Read
Mode control
Serial input/output
Command control
Power supply    TC58DVM72x1xxxx TC58DAM72x1xxxx
    Vcc:              2.7V to 3.6V             2.7V to 3.6V
   Vccq:             2.7V to 3.6V             1.65V to 1.95V
Program/Erase Cycles    1E5 cycle (with ECC)
Access time
   Cell array to register                     25 s max
   Serial Read Cycle                             50 ns min
Operating current
   Read (50 ns cycle)                            10 mA typ.
   Program (avg.)                                 10 mA typ.
Erase (avg.) 10 mA typ.
   Standby 50 PA max.
Package
      TSOP I 48-P-1220-0.50 (Weight:0.53g typ)

TC58DAM72F1FT00 Connection Diagram

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