TC255P, TC2571, TC2574VPA Selling Leads, Datasheet
MFG:TI Package Cooled:DIP D/C:05+
TC255P, TC2571, TC2574VPA Datasheet download
Part Number: TC255P
MFG: TI
Package Cooled: DIP
D/C: 05+
TC255P, TC2571, TC2574VPA
- Table of contents:
Info of TC255P
Info of TC2571
Info of TC2574VPA
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About TC255P
PDF/DataSheet Download
Datasheet: TC255P
File Size: 245850 KB
Manufacturer: TI [Texas Instruments]
Download : Click here to Download
About TC2571
PDF/DataSheet Download
Datasheet: TC2571
File Size: 155494 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About TC2001
PDF/DataSheet Download
Datasheet: TC2001
File Size: 679172 KB
Manufacturer:
Download : Click here to Download
TC255P General Description
The TC255P is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-
purpose applications where low cost and small size are desired.
The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate,which is an integral part of each image-sensing element.
The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The
device can also be operated in an interlace mode, electronically displacing the image-sensing elements during
the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing
aliasing.
One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for
an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
loss of sensitivity and resolution inherent in those technologies.
The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance
charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is
buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.
The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low
dark signal,high photoresponse uniformity,and single-phase clocking.The TC255P is characterized for operation
from 10°C to 45°C.
purpose applications where low cost and small size are desired.
The image-sensing area of the TC255P is configured in 243 lines with 336 elements in each line. Twelve
elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based
on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated
by supplying clocking pulses to the antiblooming gate,which is an integral part of each image-sensing element.
The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with low dark current. The
device can also be operated in an interlace mode, electronically displacing the image-sensing elements during
the charge integration in alternate fields, and effectively increasing the vertical resolution and minimizing
aliasing.
One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for
an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the
loss of sensitivity and resolution inherent in those technologies.
The charge is converted to signal voltage with a 12-µV per electron conversion factor by a high-performance
charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is
buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability.
The TC255P uses TI-proprietary virtual-phase technology, which provides devices with high blue response, low
dark signal,high photoresponse uniformity,and single-phase clocking.The TC255P is characterized for operation
from 10°C to 45°C.
TC255P Maximum Ratings
Supply voltage range, VCC: ADB (see Note 1) . . . . . . . . . . . . . . . . . . . 0 V to 15 V
Input voltage range, VI: ABG, IAG1, IAG2, SAG, SRG . . . . . . . . . . . . 15 V to 15 V
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . .10°C to 45°C
Storage temperature range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . 30°C to 85°C
Input voltage range, VI: ABG, IAG1, IAG2, SAG, SRG . . . . . . . . . . . . 15 V to 15 V
Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . .10°C to 45°C
Storage temperature range, TSTG . . . . . . . . . . . . . . . . . . . . . . . . . . 30°C to 85°C
TC255P Connection Diagram
TC2571 General Description
The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.
TC2571 Maximum Ratings
|
Symbol |
Parameter |
Rating |
|
VDS |
Drain-Source Voltage |
12 V |
|
VGS |
Gate-Source Voltage |
-5 V |
|
IDS |
Drain Current |
IDSS |
|
Pin |
RF Input Power, CW |
26 dBm |
|
PT |
Continuous Dissipation |
3.8 W |
|
TCH |
Channel Temperature |
175 |
|
TSTG |
Storage Temperature |
- 65 to +175 |
TC2571 Features
• 1W Typical Output Power at 6 GHz
• 11dB Typical Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency: PAE 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Low Cost Ceramic Package
• 11dB Typical Power Gain at 6 GHz
• High Linearity: IP3 = 40 dBm Typical at 6 GHz
• High Power Added Efficiency: PAE 43 % for Class A Operation
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO 15 V
• Lg = 0.35 µm, Wg = 2.4 mm
• 100 % DC Tested
• Low Cost Ceramic Package
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