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TC1411EOA, TC1411EOA713, TC1411EPA

TC1411EOA, TC1411EOA713, TC1411EPA Selling Leads, Datasheet

MFG:Microchip Technology  Category:Integrated Circuits (ICs)  Package Cooled:08+  D/C:SOP-8

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TC1411EOA, TC1411EOA713, TC1411EPA Datasheet download

Five Points

Part Number: TC1411EOA

Category: Integrated Circuits (ICs)

MFG: Microchip Technology

Package Cooled: 08+

D/C: SOP-8

Description: IC MOSFET DVR 1A HS INV 8DIP

Price Break

1
10
25
100

Unit Price

1.39000
1.16000
.97000
.88000

Extended Price

1.39
11.60
24.25
88.00

(All prices are in USD) Prices for reference only
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About TC1411EOA

PDF/DataSheet Download

Datasheet: TC1411EOA

File Size: 68535 KB

Manufacturer: MICROCHIP [Microchip Technology]

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About TC1014

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Datasheet: TC1014

File Size: 571655 KB

Manufacturer: TELCOM [TelCom Semiconductor, Inc]

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Datasheet: TC1411EPA

File Size: 446540 KB

Manufacturer: MICROCHIP [Microchip Technology]

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TC1411EOA Parameters

Technical/Catalog InformationTC1411EOA
VendorMicrochip Technology
CategoryIntegrated Circuits (ICs)
ConfigurationLow-Side
Voltage - Supply4.5 V ~ 16 V
Current - Peak1A
Delay Time30ns
Package / Case8-SOIC (3.9mm Width)
PackagingTube
Number of Outputs1
Input TypeInverting
Number of Configurations1
Operating Temperature-40°C ~ 85°C
High Side Voltage - Max (Bootstrap)-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TC1411EOA
TC1411EOA

TC1411EOA General Description

The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1411/1411N can easily switch 1000 pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy.

TC1411EOA Maximum Ratings

Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ............... 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................ +300°C
Package Thermal Resistance
      CerDIP RJ-A ............................................... 150°C/W
      CerDIP RJ-C ................................................. 50°C/W
      PDIP RJ-A ................................................... 125°C/W
      PDIP RJ-C .................................................... 42°C/W
     SOIC RJ-A .................................................. 155°C/W
     SOIC RJ-C .................................................... 45°C/W
Operating Temperature Range
      C Version ............................................ 0°C to +70°C
      E Version ....................................... 40°C to +85°C
Power Dissipation (TA 70°C)
     Plastic .............................................................730mW
     CerDIP ............................................................800mW
     SOIC ...............................................................470mW

TC1411EOA Features

Latch-Up Protected: Will Withstand 500mA Reverse Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected ....................................................4 kV
High Peak Output Current .................................. 1A
Wide Operating Range .......................... 4.5V to 16V
High Capacitive Load Drive Capability .......................... 1000pF in 25nsec
Short Delay Time .................................. 30nsec Typ
Consistent Delay Times With Changes in Supply Voltage
Matched Delay Times
Low Supply Current
- With Logic "1" Input ................................. 500A
- With Logic "0" Input ................................. 150A
Low Output Impedance ....................................... 8
Pinout Same as TC1410/12/13

TC1411EOA Connection Diagram

TC1411EOA713 Parameters

Technical/Catalog InformationTC1411EOA713
VendorMicrochip Technology
CategoryIntegrated Circuits (ICs)
ConfigurationLow-Side
Voltage - Supply4.5 V ~ 16 V
Current - Peak1A
Delay Time30ns
Package / Case8-SOIC (3.9mm Width)
PackagingTape & Reel (TR)
Number of Outputs1
Input TypeInverting
Number of Configurations1
Operating Temperature-40°C ~ 85°C
High Side Voltage - Max (Bootstrap)-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TC1411EOA713
TC1411EOA713

TC1411EPA Parameters

Technical/Catalog InformationTC1411EPA
VendorMicrochip Technology
CategoryIntegrated Circuits (ICs)
ConfigurationLow-Side
Voltage - Supply4.5 V ~ 16 V
Current - Peak1A
Delay Time30ns
Package / Case8-DIP (300 mil)
PackagingTube
Number of Outputs1
Input TypeInverting
Number of Configurations1
Operating Temperature-40°C ~ 85°C
High Side Voltage - Max (Bootstrap)-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TC1411EPA
TC1411EPA

TC1411EPA General Description

The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge.

As MOSFET drivers, the TC1411/1411N can easily switch 1000 pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET's intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy.

TC1411EPA Maximum Ratings

Supply Voltage ......................................................... +20V
Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND 5.0V)
Maximum Chip Temperature................................. +150°C
Storage Temperature Range ............... 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................ +300°C
Package Thermal Resistance
      CerDIP RJ-A ............................................... 150°C/W
      CerDIP RJ-C ................................................. 50°C/W
      PDIP RJ-A ................................................... 125°C/W
      PDIP RJ-C .................................................... 42°C/W
     SOIC RJ-A .................................................. 155°C/W
     SOIC RJ-C .................................................... 45°C/W
Operating Temperature Range
      C Version ............................................ 0°C to +70°C
      E Version ....................................... 40°C to +85°C
Power Dissipation (TA 70°C)
     Plastic .............................................................730mW
     CerDIP ............................................................800mW
     SOIC ...............................................................470mW

TC1411EPA Features

Latch-Up Protected: Will Withstand 500mA Reverse Current
Input Will Withstand Negative Inputs Up to 5V
ESD Protected ....................................................4 kV
High Peak Output Current .................................. 1A
Wide Operating Range .......................... 4.5V to 16V
High Capacitive Load Drive Capability .......................... 1000pF in 25nsec
Short Delay Time .................................. 30nsec Typ
Consistent Delay Times With Changes in Supply Voltage
Matched Delay Times
Low Supply Current
- With Logic "1" Input ................................. 500A
- With Logic "0" Input ................................. 150A
Low Output Impedance ....................................... 8
Pinout Same as TC1410/12/13

TC1411EPA Connection Diagram

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