Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
This is the description about TBB1004 of the Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier. Here are the features: Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.Suitable for World Standard Tuner RF amplifier.Very useful for total tuner cost reduction.Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-6. The absolute Maximum Ratings are these (TA = 25°C). Drain to source voltage is 6 V. Gate1 to source voltage is from -0 to +6 V. Gate2 to source voltage VG2S from -0 to +6 V. Drain current is 30 mA. Channel power dissipation is 250 mW. Channel temperature Tch is 150 °C. Storage temperature Tstg is from 55 to +150 °C. These are the Electrical Characteristics (Ta = 25°C). The below specification are applicable for UHF unit (FET1). Drain to source breakdown voltage is 6 V. Gate1 to source breakdown voltage is +6V. Gate2 to source breakdown voltage is +6 V. Gate1 to source cutoff current is +100 nA. Gate2 to source cutoff current is +100 nA. Gate1 to source cutoff voltage is from 0.5 to 1.0 V. Gate2 to source cutoff voltage is from 0.5 to 1.0 V. Drain current is from 13 to 21 mA. Forward transfer admittance is from| 21 to 31 mS. Input capacitance is from 1.4 to 2.2 pF. Output capacitanceis from 1.0 to 1.8 pF.Reverse transfer capacitance is 0.04 pF. At present there is not too much information about this model. If you are willing to find more about the TBB1004, please pay attention to our web! We will promptly update the relevant information. You can find it in www.ChinaICMart.com or www.seekic.com. Welcome to contact with us.