Category: Over Voltage, Current, Temperature Devices
MFG: Diodes Inc
Package Cooled: DO214AA
D/C: 09+
Description: THYRISTOR PROTECT BI-DIR 50A SMB
Price Break
30000
Unit Price
.40920
Extended Price
12276.00
(All prices are in USD) Prices for reference only
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Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse current @ 10/1000us
IPP
30
A
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
ITSM
15
A
Junction temperature range
TJ
-40 to +150
storage temperature range
TSTG
-55 to +150
Thermal Resistance, Junction to Lead
RJL
30
/W
Thermal Resistance, Junction to Ambient
RJL
120
/W
Typical Positive Temperature Coefficient for Breakdown Voltage
VBR/Tj
0.1
%/
TB0640L-13 Features
· 30A Peak Pulse Current @ 10/1000ms · 150A Peak Pulse Current @ 8/20ms · 58 - 320V Stand-Off Voltages · Oxide-Glass Passivated Junction · Bi-Directional Protection In a Single Device · High Off-State impedance and Low On-State Voltage
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
CHARACTERISTICS
SYMBOL
VALUE
UNIT
Non-repetitive peak impulse current @ 10/1000us
IPP
50
A
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
ITSM
30
A
Junction temperature range
TJ
-40 to +150
storage temperature range
TSTG
-55 to +150
Thermal Resistance, Junction to Lead
RJL
20
/W
Thermal Resistance, Junction to Ambient
RJL
100
/W
Typical Positive Temperature Coefficient for Breakdown Voltage
VBR/Tj
0.1
%/
TB0640M-13 Features
· 50A Peak Pulse Current @ 10/1000ms · 250A Peak Pulse Current @ 8/20ms · 58 - 320V Stand-Off Voltages · Oxide-Glass Passivated Junction · Bi-Directional Protection In a Single Device · High Off-State impedance and Low On-State Voltage