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Stanford Microdevices' SXH-189 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
SXH-189 Maximum Ratings
Parameter
Absolute Limit
Device Voltage
6V
Device Current
200mA
Power Dissipation
1500mW
RF Input Power
100mW
Junction Temperature
+150°C
Operating Temperature
-40°C to +85°C
Storage Temperature
-65°C to +150°C
SXH-189 Features
• Patented High Reliability GaAs HBT Technology • High 3rd Order Intercept : +39 dBm typ. at 1960 MHz • Surface-Mountable Power Plastic Package
SXH-189 Typical Application
• PCS, Cellular Systems • High Linearity IF Amplifiers