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Sirenza Microdevices' SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost, surfacemountable plastic package.
These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications.
Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
SXB-4089Z Maximum Ratings
Parameter
Absolute Limit
Max Device Current (ID)
500mA
Max Device Voltage (VD)
6.V
Max. RF Input Power
60mW
Max. Dissipated Power
2W
Max. Junction Temp. (TJ)
+165°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
SXB-4089Z Features
• On-chip Active Bias Control, Single 5V Supply • High Output 3rd Order Intercept: +45 dBm typ. • High P1dB : +28 dBm typ. • High Gain: +20 dB at 880 MHz • Low Rth: 25°C/W typ. • Robust 2000V ESD, Class 2
SXB-4089Z Typical Application
• W-CDMA, PCS, Cellular Systems • Multi-Carrier Applications