STS4DNF60L-TR, STS4DPF20, STS4NM20N Selling Leads, Datasheet
MFG:ST Package Cooled:2009+ROHS D/C:2000
STS4DNF60L-TR, STS4DPF20, STS4NM20N Datasheet download
Part Number: STS4DNF60L-TR
MFG: ST
Package Cooled: 2009+ROHS
D/C: 2000
MFG:ST Package Cooled:2009+ROHS D/C:2000
STS4DNF60L-TR, STS4DPF20, STS4NM20N Datasheet download
MFG: ST
Package Cooled: 2009+ROHS
D/C: 2000
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PDF/DataSheet Download
Datasheet: STS01DTP06
File Size: 306007 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STS4DPF20L
File Size: 255030 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STS4NM20N
File Size: 141519 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technology to lower voltages. The device exhibits worldwide lowest gate charge for any given on-resistance.Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFETTM products, it contributes to reducing losses and boosting efficiency
Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
200 |
V |
VDGR |
Drain-gate Voltage (RGS = 20 k) |
200 |
V |
VGS |
Gate- source Voltage |
±30 |
V |
ID
|
Drain Current (continuos) at TC = 25 Drain Current (continuos) at TC = 100 |
4
2.83 |
A
A |
IDM (2) |
Drain Current (pulsed) |
16 |
A |
Ptot |
Total Dissipation at TC = 25 |
2.5 |
W |
Derating Factor(1) |
0.02 |
W/ | |
dv/dt (3) |
Peak Diode Recovery voltage slope |
10 |
V/ns |
The MDmeshTM family is very suitable for increasing power density allowing system miniaturization and higher efficiencies