STS01DTP06

Transistors Bipolar (BJT) TRANSISTOR

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STS01DTP06 Picture
SeekIC No. : 00207061 Detail

STS01DTP06: Transistors Bipolar (BJT) TRANSISTOR

floor Price/Ceiling Price

US $ .32~.46 / Piece | Get Latest Price
Part Number:
STS01DTP06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.46
  • $.42
  • $.37
  • $.32
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Transistor Polarity : NPN, PNP Collector- Emitter Voltage VCEO Max : 30 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 3 A
DC Collector/Base Gain hfe Min : 100 Configuration : Dual Dual Collector
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SO N Packaging : Reel    

Description

Maximum Operating Frequency :
DC Collector/Base Gain hfe Min : 100
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Collector- Emitter Voltage VCEO Max : 30 V
Transistor Polarity : NPN, PNP
Configuration : Dual Dual Collector
Package / Case : SO N


Features:

·HIGH GAIN
· LOW VCE(sat)
· SIMPLIFIED CIRCUIT DESIGN
·REDUCED COMPONENT COUNT



Application

· PUSH-PULL OR TOTEM-POLE CONFIGURATION
· MOSFET AND IGBT GATE DRIVING
· MOTOR, RELAY AND SOLENOID DRIVING



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NPN
PNP
Unit
VCBO
Collector-Base Voltage (IE = 0)
60
-60
V
VCEO
Collector-Emitter Voltage (IB = 0)
30
-30
V
VEBO
Emitter-Base Voltage (IC = 0)
5
-5
V
IC
Collector Current
3
-3
A
ICM
Collector Peak Current(tp < 5ms)
6
-6
A
IB
Base Current
1
-1
A
IBM
Base Peak Current(tp < 1ms)
2
-2
A
PTOT
Total Dissipation at Tc = 25 single
2
W
PTOT
Total Dissipation at Tc = 25 couple
1.2
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150



Description

The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar technology. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.




Parameters:

Technical/Catalog InformationSTS01DTP06
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN + PNP (Dual)
Voltage - Collector Emitter Breakdown (Max)60V
Current - Collector (Ic) (Max)3A
Power - Max2W
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 2V
Vce Saturation (Max) @ Ib, Ic700mV @ 100mA, 2A
Frequency - Transition-
Current - Collector Cutoff (Max)1A
Mounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STS01DTP06
STS01DTP06
497 4518 1 ND
49745181ND
497-4518-1



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