STE250NS10, STE25B1, STE26N50 Selling Leads, Datasheet
MFG:ST Package Cooled:MOS D/C:08+
STE250NS10, STE25B1, STE26N50 Datasheet download
Part Number: STE250NS10
MFG: ST
Package Cooled: MOS
D/C: 08+
MFG:ST Package Cooled:MOS D/C:08+
STE250NS10, STE25B1, STE26N50 Datasheet download
MFG: ST
Package Cooled: MOS
D/C: 08+
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PDF/DataSheet Download
Datasheet: STE250NS10
File Size: 304855 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STE10
File Size: 412902 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STE26N50
File Size: 158042 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
Symbol |
Parameter |
Value |
Unit | |
VCES |
Drain-source Voltage (VGS = 0) |
100 |
V | |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
100 |
V | |
VGE |
Gate-Emitter Voltage |
± 20 |
V | |
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
220 |
A | |
ID |
Drain Current (continuous) at TC = 100°C |
156 |
A | |
IDM (*) |
Drain Current (pulsed) |
880 |
A | |
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
500 |
W | |
|
Derating Factor |
3.5 |
W/°C | |
dv/dt (1) |
Peak Diode Recovery voltage slope |
3 |
V/ns | |
VISO |
Insulation Winthstand Voltage (AC-RMS) |
2500 |
V | |
Tj |
Operating Junction Temperature |
- 55 to 150 |
°C | |
Tstg |
Storage Temperature |
150 |
°C |
Symbol |
Parameter |
Value |
Unit |
VCES |
Drain-source Voltage (VGS = 0) |
500 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
500 |
V |
VGE |
Gate-Emitter Voltage |
± 30 |
V |
ID |
Drain Current (continuous) at TC = 25°C (Steady State) |
26 |
A |
ID |
Drain Current (continuous) at TC = 100°C |
17 |
A |
IDM (*) |
Drain Current (pulsed) |
104 |
A |
PTOT |
Total Dissipation at TC = 25°C (Steady State) |
300 |
W |
|
Derating Factor |
2.4 |
W/°C |
Tstg |
Storage Temperature |
- 55 to 150 |
oC |
Tj |
Max. Operating Junction Temperature |
150 |
°C |
VISO |
Insulation Withstand Voltage (AC-RMS) |
2500 |
V |