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TYPICAL RDS(on) = 0.015 W HIGH CURRENT POWER MODULE AVALANCHERUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAKPOWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITYFOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) VERYLOW INTERNAL PARASITIC INDUCTANCE ISOLATEDPACKAGE UL RECOGNIZED
STE110NA20 Typical Application
SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STE110NS20FD Maximum Ratings
Symbol
Parameter
Value
Unit
VCES
Drain-source Voltage (VGS = 0)
200
V
VDGR
Drain- gate Voltage (RGS = 20 kW)
200
V
VGE
Gate-Emitter Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C (Steady State)
110
A
ID
Drain Current (continuous) at TC = 100°C
69
A
IDM (*)
Drain Current (pulsed)
440
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
500
W
Derating Factor
4
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
25
V/ns
VISO
Insulation Winthstand Voltage (AC-RMS)
2500
V
Tstg
Storage Temperature
65 to 150
°C
Tj
Max.Operating Junction Temperature
150
°C
STE110NS20FD Typical Application
HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLY (SMPS) DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE