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STE101PLF, STE110NA20, STE110NS20FD

STE101PLF, STE110NA20, STE110NS20FD Selling Leads, Datasheet

MFG:STMicroelectronics  Category:Discrete Semiconductor Products  Package Cooled:sgs  D/C:dc0432

STE110NS20FD Picture

STE101PLF, STE110NA20, STE110NS20FD Datasheet download

Five Points

Part Number: STE110NS20FD

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: sgs

D/C: dc0432

Description: MOSFET N-CH 200V 110A ISOTOP

 

 
 
 
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STE101PLF Suppliers

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  • STE100P

  • Vendor: ST Pack: QFP D/C: 02+& Qty: 243 Note: IN STOCK  Adddate: 2024-11-28
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  • Trustful International Co.,Ltd   China
    Contact: Ms.MiggieLo   MSN:sale@hktrustful.com
    Tel: 86-755-3306-2583
    Fax: 86-755-3306-2583
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  • STE100P

  • D/C: 08+& Qty: 960 Note: same day shipment  Adddate: 2024-11-28
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  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
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About STE10

PDF/DataSheet Download

Datasheet: STE10

File Size: 412902 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STE110NA20 Suppliers

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  • STE100P

  • Vendor: ST Pack: QFP D/C: 02+& Qty: 243 Note: IN STOCK  Adddate: 2024-11-28
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  • Trustful International Co.,Ltd   China
    Contact: Ms.MiggieLo   MSN:sale@hktrustful.com
    Tel: 86-755-3306-2583
    Fax: 86-755-3306-2583
    (0)
  • STE100P

  • D/C: 08+& Qty: 960 Note: same day shipment  Adddate: 2024-11-28
  • Inquire Now
  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

About STE110NA20

PDF/DataSheet Download

Datasheet: STE110NA20

File Size: 108780 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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STE110NS20FD Suppliers

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  • STE100P

  • Vendor: ST Pack: QFP D/C: 02+& Qty: 243 Note: IN STOCK  Adddate: 2024-11-28
  • Inquire Now
  • Trustful International Co.,Ltd   China
    Contact: Ms.MiggieLo   MSN:sale@hktrustful.com
    Tel: 86-755-3306-2583
    Fax: 86-755-3306-2583
    (0)
  • STE100P

  • D/C: 08+& Qty: 960 Note: same day shipment  Adddate: 2024-11-28
  • Inquire Now
  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)

About STE110NS20FD

PDF/DataSheet Download

Datasheet: STE110NS20FD

File Size: 284540 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Download : Click here to Download

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STE110NA20 Maximum Ratings

Symbol

Parameter

Value
Unit
VCES

Drain-source Voltage (VGS = 0)

200
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

200

V

VGE

Gate-Emitter Voltage

± 30
V
ID

Drain Current (continuous) at Tc = 25 oC

110
A
Id

Drain Current (continuous) at Tc = 100 oC

73
A
ICM(•)

Collector Current (pulsed)

440
A
Ptot

Total Dissipation at Tc = 25 oC

450
W

Derating Factor

3.6
W/oC
Tstg

Storage Temperature

-55 to 150
oC
Tj

Max.Operating Junction Temperature

150

oC

VISO

Insulation Withhstand Voltage (AC-RMS)

2500

V

STE110NA20 Features

 TYPICAL RDS(on) = 0.015 W
 HIGH CURRENT POWER MODULE
 AVALANCHERUGGED TECHNOLOGY
 VERY LARGE SOA - LARGE PEAKPOWER CAPABILITY
 EASY TO MOUNT
 SAME CURRENT CAPABILITYFOR THE TWO SOURCE TERMINALS
 EXTREMELY LOW Rth (Junction to case)
 VERYLOW INTERNAL PARASITIC INDUCTANCE
 ISOLATEDPACKAGE UL RECOGNIZED

STE110NA20 Typical Application

 SMPS & UPS
 MOTOR CONTROL
 WELDING EQUIPMENT
 OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS

STE110NS20FD Parameters

Technical/Catalog InformationSTE110NS20FD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs24 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds 7900pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs504nC @ 10V
Package / CaseISOTOP
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STE110NS20FD
STE110NS20FD
497 2657 5 ND
49726575ND
497-2657-5

STE110NS20FD General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

STE110NS20FD Maximum Ratings

Symbol
Parameter
Value
Unit
VCES
Drain-source Voltage (VGS = 0)
200
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

200

V

VGE
Gate-Emitter Voltage
± 20
V

ID

Drain Current (continuous) at TC = 25°C (Steady State)

110

A

ID

Drain Current (continuous) at TC = 100°C

69

A
IDM (*)
Drain Current (pulsed)
440
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
500 
W
 
Derating Factor
4
W/°C
 dv/dt (1)
 Peak Diode Recovery voltage slope
25
 V/ns
VISO
 Insulation Winthstand Voltage (AC-RMS)
2500
V
Tstg
Storage Temperature

65 to 150

°C

Tj

Max.Operating Junction Temperature

150

°C

STE110NS20FD Typical Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITCH MODE POWER SUPPLY (SMPS)
 DC-AC CONVERTER FOR WELDING EQUIPMENT AND
   UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE

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