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SQD100A60, SQD200A40, SQD200A60

Table of contents:
Info of SQD100A60
Info of SQD200A40
Info of SQD200A60

SQD100A60, SQD200A40, SQD200A60 Selling Leads, Datasheet

MFG:DR. Package Cooled:25 D/C:07+

SQD100A60, SQD200A40, SQD200A60 Datasheet download

Five Points

Part Number: SQD100A60

MFG: DR.

Package Cooled: 25

D/C: 07+

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SQD200A40 Maximum Ratings

Symbol	Item		Conditions	Ratings		Unit
				SQD200A40	SQD200A60
V_CBO	Collector-Base Voltage			400	600	V
V_CEX	Collector-Emitter Voltage		VBE=-2V	400	600	V
V_EBO	Emitter-Base Voltage			10		V
I_C	Collector Current		()=pw1ms	200(400)		A
-I_C	Reverse Collector Current			200		A
I_B	Base Current			12		A
P_T	Total power dissipation		TC=25	1250		W
T_j	Junction Temperature			-40 to +150
T_stg	Storage Temperature			-40 to +125
V_ISO	Isolation Voltage		A.C.1minute	2500		V
	Mounting Torque	(M5)	Recommended Value 1.5-2.5(15-25)	2.7(28)		N･m f･B)
		Terminal(M5)	Recommended Value 1.5-2.5(15-25)	2.7(28)
	Mass		Typical Value	380		g

SQD200A40 Typical Application

IC=200A, VCEX=400/600V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
VEBO 10V for faster switching speed.

SQD200A60 Maximum Ratings

Symbol	Item		Conditions	Ratings		Unit
				SQD200A40	SQD200A60
V_CBO	Collector-Base Voltage			400	600	V
V_CEX	Collector-Emitter Voltage		VBE=-2V	400	600	V
V_EBO	Emitter-Base Voltage			10		V
I_C	Collector Current		()=pw1ms	200(400)		A
-I_C	Reverse Collector Current			200		A
I_B	Base Current			12		A
P_T	Total power dissipation		TC=25	1250		W
T_j	Junction Temperature			-40 to +150
T_stg	Storage Temperature			-40 to +125
V_ISO	Isolation Voltage		A.C.1minute	2500		V
	Mounting Torque	(M5)	Recommended Value 1.5-2.5(15-25)	2.7(28)		N･m f･B)
		Terminal(M5)	Recommended Value 1.5-2.5(15-25)	2.7(28)
	Mass		Typical Value	380		g

SQD200A60 Typical Application

IC=200A, VCEX=400/600V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
VEBO 10V for faster switching speed.

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