SNA-586, SNA676, SNA-676 Selling Leads, Datasheet
MFG:Sirenza Package Cooled:SMT-86 D/C:03+
SNA-586, SNA676, SNA-676 Datasheet download
Part Number: SNA-586
MFG: Sirenza
Package Cooled: SMT-86
D/C: 03+
MFG:Sirenza Package Cooled:SMT-86 D/C:03+
SNA-586, SNA676, SNA-676 Datasheet download
MFG: Sirenza
Package Cooled: SMT-86
D/C: 03+
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PDF/DataSheet Download
Datasheet: SNA-586
File Size: 360376 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: SNA-100
File Size: 64049 KB
Manufacturer: STANFORD [Stanford Microdevices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SNA-676
File Size: 91980 KB
Manufacturer: STANFORD [Stanford Microdevices]
Download : Click here to Download
Stanford Microdevices' SNA-586 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 5 GHz. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Typical IP3 at 850 MHz with 65mA is 32.5 dBm.
These unconditionally stable amplifiers provide 18 dB of gain and 18.4 dBm of 1dB compressed power and require only a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional inductor are needed for operation. This MMIC is an ideal choice for wireless applications such as cellular, PCS, CDPD, wireless data and SONET.
Stanford Microdevices' SNA-676 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) housed in a low-cost surface mountable stripline package. A Darlington configuration is utilized for broadband performance to 6.5 GHz.
These unconditionally stable amplifiers provide 11dB of gain and +18dBm of P1dB when biased at 5.7V and 70mA. This MMIC requires only a single suply voltage. The use of an external resistor allows for bias flexibility and stability.
Also available in chip form (SNA-600), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits.
The SNA-676 is available in tape and reel at 1000, 3000 and 5000 devices per reel.
Parameter |
Absolute M aximum |
Device Current |
100mA |
Power D issipation |
560mW |
RF Input Power |
200mW |
Junction Temperature |
+200C |
Operating Temperature |
-45C to +85C |
Storage Temperature |
-65C to +150C |