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SIP21107DVP-46-E3, SIP21108, SIP21108DR-T1-E3

Table of contents:
Info of SIP21107DVP-46-E3
Info of SIP21108
Info of SIP21108DR-T1-E3

SIP21107DVP-46-E3, SIP21108, SIP21108DR-T1-E3 Selling Leads, Datasheet

MFG:Vishay Package Cooled:TSC75-6L D/C:2010+

SIP21107DVP-46-E3, SIP21108, SIP21108DR-T1-E3 Picture

SIP21107DVP-46-E3, SIP21108, SIP21108DR-T1-E3 Datasheet download

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Part Number: SIP21107DVP-46-E3

MFG: Vishay

Package Cooled: TSC75-6L

D/C: 2010+

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SIP21107DVP-46-E3 General Description

SiP21106 datasheet

SIP21108 General Description

The SiP21106 BiCMOS 150 mA low noise LDO voltage regulators are the perfect choice for low battery operated low powered applications. An Ultra low ground current and low dropout voltage of 135 mV at 150 mA load helps to extend battery life for portable electronics. Systems requiring a quiet voltage source, such as RF applications, will benefit from the SiP21106 low output noise.

The SiP21107 do not require a noise bypass cpacitor and provides an error flag pin (POK or Power OK). POK output requires an external pull-up resistor and goes low when the supply has not come up to voltage.

The SiP21108 output is adjusted with an external resistor network.

The SiP21106/7/8 regulators allow stable operation with very small ceramic output capacitors, reducing board space and component cost. They are designed to maintain regulation while delivering 330 mA peak current upon turn-on. During start-up, an active pull-down circuit improves the output transient response and regulation. In shutdown mode, the output automatically discharges to ground through a 100 NMOS. The SiP21106/7/8 are available in TSOT23-5L and a super thin lead (Pb)-free TSC75-6L packages for operation over the industrial operation range (- 40 °C to 85 °C).

SIP21108 Maximum Ratings

Parameter	Limit		Unit
Input Voltage, V_IN to GND	- 0.3 to 6		V
VEN (See Detailed Description)	- 0.3 to 6
Output Current (I_OUT)	Short Circuit Protected
Output Voltage (V_OUT)	- 0.3 to V_IN + 0.3		V
	TSC75-6L	TSOT23-5L
Package Power Dissipation (P_D)^a	420	440	mW
Package Thermal Resistance (_JA)^b	131	180	°C/W
Maximum Junction Temperature, T_J(max)	125		°C
Storage Temperature, T_STG	- 65 to 150
Lead Temperature, T_L^c	260

SIP21108 Features

• TSC75-6L Package (1.6 x 1.6 x 0.6 mm), and TSOT23-5L Package Options
• 1.0 % Output Voltage Accuracy at 25 °C
• Low Dropout Voltage: 135 mV at 150 mA
• SiP21106 Low Noise: 60 µV(rms) (10 Hz to 100 kHz Bandwidth) With 10 nF Over Full Load Range
• 35 µA (typical) Ground Current at 1 mA Load
• 1 µA Maximum Shutdown Current at 85 °C
• Output Auto Discharge at Shutdown Mode
• Built-in Short Circuit (330 mA typical) and Thermal Protection (160 °C typical)
• SiP21108 Adjustable Output Voltage
• SiP21107 POK Error Flag
• - 40 °C to + 125 °C Junction Temperature Range for Operation
• Uses Low ESR Ceramic Capacitors
• Fixed Voltage Output 1.3 V to 5 V in 50 mV Steps

SIP21108 Typical Application

• Cellular Phones, Wireless Handsets
• PDAs
• MP3 Players
• Digital Cameras
• Pagers
• Wireless Modem
• Noise-Sensitive Electronic Systems

SIP21108DR-T1-E3 General Description

SiP21106 datasheet

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