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SFU9210, SFU9220, SFU9230B

Table of contents:
Info of SFU9210
Info of SFU9220
Info of SFU9230B

SFU9210, SFU9220, SFU9230B Selling Leads, Datasheet

MFG:FAIRC Package Cooled:TO-251 D/C:08+

SFU9210, SFU9220, SFU9230B Datasheet download

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Part Number: SFU9210

MFG: FAIRC

Package Cooled: TO-251

D/C: 08+

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SFU9210 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-200	V
I_D	Continuous Drain Current (T_C=25)	-1.6	A
I_D	Continuous Drain Current (T_C=100)	-1.08	A
I_DM	Drain Current-Pulsed	-6.4	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	119	mJ
I_AR	Avalanche Current	-1.6	A
E_AR	Repetitive Avalanche Energy	5.2	mJ
dv/dt	Peak Diode Recovery dv/dt	-6.5	V/ns
P_D	Total Power Dissipation (T_A=25)^*	2.5	W
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	52 0.42	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFU9210 Features

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ V_DS = -200V
` Lower R_DS(ON) : 2.084 (Typ.)

SFU9220 Maximum Ratings

Symbol	Characteristic	Value	Units
V_DSS	Drain-to-Source Voltage	-200	V
I_D	Continuous Drain Current (T_C=25)	-3.1	A
I_D	Continuous Drain Current (T_C=100)	-1.96	A
I_DM	Drain Current-Pulsed	-12	A
V_GS	Gate-to-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy	256	mJ
I_AR	Avalanche Current	-3.1	A
E_AR	Repetitive Avalanche Energy	3.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
P_D	Total Power Dissipation (T_A=25)^*	2.5	W
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	30 0.24	W W/°C
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +150	°C
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300	°C

SFU9220 Features

SFU9230B General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.

SFU9230B Maximum Ratings

Symbol	Parameter	SFR9230B / SFU9230B	Units
V_DSS	Drain-Source Voltage	-200	V
I_D	Drain Current - Continuous (T_C=25) - Continuous (T_C=100)	-5.4	A
I_D	Drain Current - Continuous (T_C=25) - Continuous (T_C=100)	-3.4	A
I_DM	Drain Current - Pulsed (Note 1)	-22	A
V_GS	Gate-Source Voltage	±30	V
E_AS	Single Pulsed Avalanche Energy (Note 2)	390	mJ
I_AR	Avalanche Current (Note 1)	-5.4	A
E_AR	Repetitive Avalanche Energy (Note 1)	4.9	mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)	-5.5	V/ns
P_D	Power Dissipation (T_A=25) ^*	2.5	W
	Power Dissipation (T_C=25) - Derate above 25°C	49	W
	Power Dissipation (T_C=25) - Derate above 25°C	0.39	W/°C
T_J,T_STG	Operating and Storage Temperature Range	-55 to +150	°C
T_L	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300	°C

SFU9230B Features

` -5.4A, -200V, R_DS(on) = 0.8 @V_GS = -10 V
` Low gate charge ( typical 33 nC)
` Low Crss ( typical 45 pF)
` Fast switching
` 100% avalanche tested
` Improved dv/dt capability

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