SFM15, SFM16, SFM16-M Selling Leads, Datasheet
MFG:Formosa Package Cooled:SOD123 D/C:09+
SFM15, SFM16, SFM16-M Datasheet download
Part Number: SFM15
MFG: Formosa
Package Cooled: SOD123
D/C: 09+
MFG:Formosa Package Cooled:SOD123 D/C:09+
SFM15, SFM16, SFM16-M Datasheet download
MFG: Formosa
Package Cooled: SOD123
D/C: 09+
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PDF/DataSheet Download
Datasheet: SFM15
File Size: 71050 KB
Manufacturer: FORMOSA [Formosa MS]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SFM16
File Size: 71050 KB
Manufacturer: FORMOSA [Formosa MS]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: SFM16-M
File Size: 71838 KB
Manufacturer: FORMOSA [Formosa MS]
Download : Click here to Download
PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
Forward rectified current | Ambient temperature = 50 | IO | 1.0 | A | ||
Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) |
IFSM | 30 | A | ||
Reverse current | VR = VRRM TA = 25 | IR | 5.0 | uA | ||
VR = VRRM TA = 100 | 100 | uA | ||||
Thermal resistance | Junction to ambient | R JA | 32 | / w | ||
Diode junction capacitance | f=1MHz and applied 4vDC reverse voltage | CJ | 10 | pF | ||
Storage temperature | TSTG | -55 | +150 |
PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
Forward rectified current | Ambient temperature = 50 | IO | 1.0 | A | ||
Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) |
IFSM | 30 | A | ||
Reverse current | VR = VRRM TA = 25 | IR | 5.0 | uA | ||
VR = VRRM TA = 100 | 100 | uA | ||||
Thermal resistance | Junction to ambient | R JA | 32 | / w | ||
Diode junction capacitance | f=1MHz and applied 4vDC reverse voltage | CJ | 10 | pF | ||
Storage temperature | TSTG | -55 | +150 |
PARAMETER | CONDITIONS | Symbol | MIN. | TYP. | MAX. | UNIT |
Forward rectified current | Ambient temperature = 50 | IO | 1.0 | A | ||
Forward surge current | 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) |
IFSM | 30 | A | ||
Reverse current | VR = VRRM TA = 25 | IR | 5.0 | uA | ||
VR = VRRM TA = 100 | 100 | uA | ||||
Thermal resistance | Junction to ambient | R JA | 42 | / w | ||
Diode junction capacitance | f=1MHz and applied 4vDC reverse voltage | CJ | 10 | pF | ||
Storage temperature | TSTG | -55 | +150 |