SFD30N06, SFD45N03L, SFD601G Selling Leads, Datasheet
MFG:07+ Package Cooled:9800 D/C:TO
SFD30N06, SFD45N03L, SFD601G Datasheet download
Part Number: SFD30N06
MFG: 07+
Package Cooled: 9800
D/C: TO
SFD30N06, SFD45N03L, SFD601G
- Table of contents:
Info of SFD30N06
Info of SFD45N03L
Info of SFD601G
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About SFD30N06
PDF/DataSheet Download
Datasheet: SFD30N06
File Size: 1038157 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SFD45N03L
PDF/DataSheet Download
Datasheet: SFD45N03L
File Size: 1088999 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About SFD601G
PDF/DataSheet Download
Datasheet: SFD601G
File Size: 59092 KB
Manufacturer: TSC [Taiwan Semiconductor Company, Ltd]
Download : Click here to Download
SFD30N06 General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFD30N06 Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
| VDSS |
Drain to Source Voltage |
60 |
V |
| ID |
Continuous Drain Current(@TC = 25°C) |
23 |
A |
| Continuous Drain Current(@TC = 100°C) |
15 |
A | |
| IDM | Drain Current Pulsed (Note 1) |
92 |
A |
| VGS | Gate to Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
430 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Total Power Dissipation(@TA = 25 °C) |
2.5 |
W |
| Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C |
44 |
W | |
|
0.35 |
W/°C | ||
| TSTG,TJ | Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
°C |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds |
300 |
°C |
SFD30N06 Features
` Low RDS(on) (0.04 )@VGS=10V
` Gate Charge (Typical 27nC)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
` Gate Charge (Typical 27nC)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
SFD45N03L General Description
This Power MOSFET is produced using SemiWell's advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics. This Power MOSFET is well suited for synchronous DC-DC Converters and Power Management in portable and battery operated products.
SFD45N03L Maximum Ratings
|
Symbol |
Parameter |
Value |
Units |
| VDSS |
Drain to Source Voltage |
30 |
V |
| ID |
Continuous Drain Current(@TC = 25°C) |
37 |
A |
| Continuous Drain Current(@TC = 100°C) |
24 |
A | |
| IDM | Drain Current Pulsed (Note 1) |
148 |
A |
| VGS | Gate to Source Voltage |
±20 |
V |
| EAS | Single Pulsed Avalanche Energy (Note 2) |
220 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
| PD | Total Power Dissipation(@TA = 25 °C) |
2.5 |
W |
| Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C |
45 |
W | |
|
0.36 |
W/°C | ||
| TSTG,TJ | Operating Junction Temperature & Storage Temperature |
- 55 ~ 150 |
°C |
| TL | Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds |
300 |
°C |
SFD45N03L Features
` Low RDS(on) (0.018 )@VGS=10V
` Low Gate Charge (Typical 17.5nC)
` Low Crss (Typical 110pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
` Low Gate Charge (Typical 17.5nC)
` Low Crss (Typical 110pF)
` Improved dv/dt Capability
` 100% Avalanche Tested
` Maximum Junction Temperature Range (150°C)
SFD601G General Description
| Type Number |
Symbol |
SFD 601G |
SFD 602G |
SFD 603G |
SFD 604G |
SFD 605G |
SFD 606G |
SFD 607G |
SFD 608G |
Units |
| Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
150 |
200 |
300 |
400 |
500 |
600 |
V |
| Maximum RMS Voltage |
VRMS |
35 |
70 |
105 |
140 |
210 |
280 |
350 |
420 |
V |
| Maximum DC Blocking Voltage |
VDC |
50 |
100 |
150 |
200 |
300 |
400 |
500 |
600 |
V |
| Maximum Average Forward Rectified Current@TC = 137 |
I(AV) |
6.0 |
A | |||||||
| Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load(JEDEC method ) |
IFSM |
50 |
A | |||||||
| Maximum Instantaneous Forward Voltage @ 3.0A |
VF |
1.1 |
1.3 |
1.7 |
V | |||||
| Maximum DC Reverse Current @ TA=25 at Rated DC Blocking Voltage @ TA=100 |
IR |
5.0 200 |
A A | |||||||
| Maximum Reverse Recovery Time (Note 1) |
Trr |
35 |
nS | |||||||
| Typical Thermal Resistance (Note 3) |
RJC |
9.0 |
/W | |||||||
| Typical Junction Capacitance (Note 2) |
Cj |
50 |
30 |
pF | ||||||
| Operating Temperature Range |
TJ |
-65 to +150 |
||||||||
| Storage Temperature Range |
TSTG |
-65 to +150 |
||||||||
SFD601G Features
· Ultrafast Recovery
· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability
· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability
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