SETB, SETD, SETE Selling Leads, Datasheet
D/C:09+
SETB, SETD, SETE
- Table of contents:
Info of SETB
Info of SETD
Info of SETE
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About SETB
PDF/DataSheet Download
Datasheet: SETB
File Size: 49249 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
About SETD
PDF/DataSheet Download
Datasheet: SETD
File Size: 49249 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
About SETE
PDF/DataSheet Download
Datasheet: SETE
File Size: 49249 KB
Manufacturer: EIC [EIC discrete Semiconductors]
Download : Click here to Download
SETB Maximum Ratings
Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
| Symbols | SETA | SETB | SETD | SETE | SETG | SETJ | SETK | SETM | Units | |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
Volts |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum average forward rectified current TA=55 |
IF(AV) |
2.5 |
Amps | |||||||
| Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100 |
Amps | |||||||
| Maximum instantaneous forward voltage at 1.0A |
VF |
1.1
|
1.7
|
Volts | ||||||
| Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100 |
IR |
10 |
A | |||||||
|
IR(H) |
50 |
A | ||||||||
| Maximum Reverse recovery time (Note 1) |
Trr |
50 |
75 |
nS | ||||||
| Typical junction capacitance (Note 2) |
CJ |
50.0 |
pF | |||||||
| Junction temperature range |
TJ |
-65to+150 |
||||||||
| storage temperature range |
TSTG |
-65to+150 |
||||||||
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
SETB Features
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
SETD Maximum Ratings
Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
| Symbols | SETA | SETB | SETD | SETE | SETG | SETJ | SETK | SETM | Units | |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
Volts |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum average forward rectified current TA=55 |
IF(AV) |
2.5 |
Amps | |||||||
| Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100 |
Amps | |||||||
| Maximum instantaneous forward voltage at 1.0A |
VF |
1.1
|
1.7
|
Volts | ||||||
| Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100 |
IR |
10 |
A | |||||||
|
IR(H) |
50 |
A | ||||||||
| Maximum Reverse recovery time (Note 1) |
Trr |
50 |
75 |
nS | ||||||
| Typical junction capacitance (Note 2) |
CJ |
50.0 |
pF | |||||||
| Junction temperature range |
TJ |
-65to+150 |
||||||||
| storage temperature range |
TSTG |
-65to+150 |
||||||||
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
SETD Features
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
SETE Maximum Ratings
Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.For capacitive load, derate current by 20%.
| Symbols | SETA | SETB | SETD | SETE | SETG | SETJ | SETK | SETM | Units | |
| Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
Volts |
| Maximum DC blocking voltage |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
| Maximum average forward rectified current TA=55 |
IF(AV) |
2.5 |
Amps | |||||||
| Peak forward surge current 8.3mS single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
100 |
Amps | |||||||
| Maximum instantaneous forward voltage at 1.0A |
VF |
1.1
|
1.7
|
Volts | ||||||
| Maximum DC reverse current TA=25 at rated DC blocking voltage TA=100 |
IR |
10 |
A | |||||||
|
IR(H) |
50 |
A | ||||||||
| Maximum Reverse recovery time (Note 1) |
Trr |
50 |
75 |
nS | ||||||
| Typical junction capacitance (Note 2) |
CJ |
50.0 |
pF | |||||||
| Junction temperature range |
TJ |
-65to+150 |
||||||||
| storage temperature range |
TSTG |
-65to+150 |
||||||||
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
SETE Features
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
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