S73WS256NDEBFWT70, S73WS256NDEBFWT73, S73WS256NDEBFWXX3

The S73WS256NDEBFWT70 is produced by Mirrorbit Flash which fabricated on 110 nm process technology.These burst mode flash device are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins.These products can operate up to 80 MHz and use a single Vcc of 1.7V to 1.95V that makes them ideal for today's demanding wireless applications requiring higher density,better performance and lowered ower consumption.

The distinctive characteristics of the S73WS256NDEBFWT70 are:(1)single 1.8V read/program/erase(1.70-1.95 V);(2)110 nm Mirrorbit Technology;(3)simultaneous read/write operation with zero latency;(4)32-word write buffer;(5)sixteen-bank architecture consisting of 16/8M words for WS256N/128N, respectively;(6)four 16K word sectors at both top and bottom of memory array;(7)254/126 64 Kword sectors;(8)programmable linear(8/16/32) with or without wrap around and continuous burst read modes;(9)secured silicon sector region consisting of 128 words each for factory and customer;(10)2--year data retention(typical);(11)cycling endurance:100,000 cycles per sector(typical);(12)RDY output indicates data available to system;(13)command set compatible with JEDEC(42.4) standard;(14)hardware protection of top and bottom sectors;(15)dual boot sector configuration(top and bottom);(16)persistent and password methods of advanced sector protection;(17)write operation status bits indicate program and erase operation completion;(18)suspend and resume commands for program and erase operations.

Also it can be used in understanding burst mode flash memory devices;using the operation ststus bits in AMD devices;simultaneous read/write vs. erase suspend/resume and common flash interface version 1.4 vendor specific extensions;design-in scalable wireless solutions with spansion products.

The S73WS256NDEBFWXX3 is produced by Mirrorbit Flash which fabricated on 110 nm process technology.These burst mode flash device are capable of performing simultaneous read and write operations with zero latency on two separate banks using separate data and address pins.These products can operate up to 80 MHz and use a single Vcc of 1.7V to 1.95V that makes them ideal for today's demanding wireless applications requiring higher density,better performance and lowered ower consumption.

The distinctive characteristics of the S73WS256NDEBFWXX3 are:(1)single 1.8V read/program/erase(1.70-1.95 V);(2)110 nm Mirrorbit Technology;(3)simultaneous read/write operation with zero latency;(4)32-word write buffer;(5)sixteen-bank architecture consisting of 16/8M words for WS256N/128N, respectively;(6)four 16K word sectors at both top and bottom of memory array;(7)254/126 64 Kword sectors;(8)programmable linear(8/16/32) with or without wrap around and continuous burst read modes;(9)secured silicon sector region consisting of 128 words each for factory and customer;(10)2--year data retention(typical);(11)cycling endurance:100,000 cycles per sector(typical);(12)RDY output indicates data available to system;(13)command set compatible with JEDEC(42.4) standard;(14)hardware protection of top and bottom sectors;(15)dual boot sector configuration(top and bottom);(16)persistent and password methods of advanced sector protection;(17)write operation status bits indicate program and erase operation completion;(18)suspend and resume commands for program and erase operations.

Also it can be used in understanding burst mode flash memory devices;using the operation ststus bits in AMD devices;simultaneous read/write vs. erase suspend/resume and common flash interface version 1.4 vendor specific extensions;design-in scalable wireless solutions with spansion products.