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The S524A40X11/40X21/40X41/60X81/60X51 serial EEPROM has a 1,024/2,048/4,096/8,192/16,384-bit capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung's most advanced CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 16 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524A40X11/40X21/40X41/60X81/60X51 is its support for fast mode and standard mode.
S524A40X21 Maximum Ratings
Parameter
Symbol
Conditions
Rating
Unit
Supply voltage
VCC
-
0.3 to + 7.0
V
Input voltage
VIN
-
0.3 to + 7.0
V
Output voltage
VO
-
0.3 to + 7.0
V
Operating temperature
TA
-
40 to + 85
Storage temperature
TSTG
-
65 to + 150
Electrostatic discharge
VESD
HBM
5000
V
MM
500
S524A40X21 Features
I2C-Bus Interface ` Two-wire serial interface ` Automatic word address increment EEPROM ` 1K/2K/4K/8K/16K-bit (128/256/512/1,024/2,048-byte) storage area ` 16-byte page buffer ` Typical 3 ms write cycle time with auto-erase function ` Hardware-based write protection for the entire EEPROM (using the WP pin) ` EEPROM programming voltage generated on chip ` 1,000,000 erase/write cycles ` 100 years data retention Operating Characteristics ` Operating voltage - 1.8 V to 5.5 V ` Operating current - Maximum write current: < 3 mA at 5.5 V - Maximum read current: < 200 mA at 5.5 V - Maximum stand-by current: < 1 mA at 5.5 V ` Operating temperature range - 25°C to + 70°C (commercial) - 40°C to + 85°C (industrial) ` Operating clock frequencies - 100 kHz at standard mode - 400 kHz at fast mode ` Electrostatic discharge (ESD) - 5,000 V (HBM) - 500 V (MM) Packages ` 8-pin DIP, SOP, and TSSOP