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S1204CBI21, S-1206B33-M3T1G, S1206MH

S1204CBI21, S-1206B33-M3T1G, S1206MH Selling Leads, Datasheet

MFG:AMCC  Package Cooled:SOP  D/C:02+

S1204CBI21, S-1206B33-M3T1G, S1206MH Picture

S1204CBI21, S-1206B33-M3T1G, S1206MH Datasheet download

Five Points

Part Number: S1204CBI21

 

MFG: AMCC

Package Cooled: SOP

D/C: 02+

 

 

 
 
 
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S1204CBI21 Suppliers

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  • S12000A

  • Vendor: Toshiba Pack: TO Qty: 56  Adddate: 2024-11-28
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  • YingKe Electronic hong   China
    Contact: Mr.CHENHANWEI   MSN:yingkeda@hotmail.com
    Tel: 886-754-3806635
    Fax: 886-754-6672782
    (0)

About S1200

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Datasheet: S1200

File Size: 1320826 KB

Manufacturer: ETC [ETC]

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S-1206B33-M3T1G Suppliers

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  • S-10305A

  • Qty: 20 Note: new and original  Adddate: 2024-11-28
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  • Mix-One Co   Hong
    Contact: Ms.Lisa   MSN:mixone-sales1@hotmail.com
    Tel: 00852-6063-0085260930583
    Fax: --00852-9795-1050
    (0)
  • S-1111B18MC-NYDTFG

  • D/C: 05+& Qty: 2885  Adddate: 2024-11-28
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About S-10

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Datasheet: S-10

File Size: 183978 KB

Manufacturer: Sumida Corporation

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S1206MH Suppliers

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  • S12000A

  • Vendor: Toshiba Pack: TO Qty: 56  Adddate: 2024-11-28
  • Inquire Now
  • YingKe Electronic hong   China
    Contact: Mr.CHENHANWEI   MSN:yingkeda@hotmail.com
    Tel: 886-754-3806635
    Fax: 886-754-6672782
    (0)

About S1206MH

PDF/DataSheet Download

Datasheet: S1206MH

File Size: 63427 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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S1206MH General Description

The S12xxxH series of SCRs uses a highperformance MESA GLASS PNPN technology.These parts are intended for general purpose pplications.

S1206MH Maximum Ratings

Symbol
Conditions
Value
Unit
IT(RMS)
RMS on-state current
(180° conductionangle)
Tc= 90
12
A
IT(AV)
Average on-state current
(180° conductionangle)
Tc= 90
7.6
A
ITSM
Non repetitive surge peak on-state current
(Tj initial = 25°C )
tp = 8.3 ms
130
A
tp = 10 ms
120
I2T
I2t Value for fusing tp = 10 ms
72
A2S
dv/dt
Critical rate of rise of on-state current
IG = 100 mA diG /dt = 1 A/s.
100
V/s
Tstg
TJ
Storage and operating junction temperature range
- 40, + 150
- 40, + 125

TI
Maximum lead temperature for soldering during 10s at
4.5mm from case
260


Symbol
Conditions
Voltage
Unit
B
D
M
N
VDRM
VDRM
Repetitive peak off-state voltage
Tj = 125°C
200
400
600
800
V
RTH(j-a)
Junction to ambient
60
/W
RTH(j-c)
Junction to case for DC
3
/W

S1206MH Features

·IT(RMS) = 12A
·VDRM = 200V to 800V
·High surge current capability

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