RX1214B300Y, RX1214B300YK, RX1214B350Y Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TRANSISTOR D/C:N/A
RX1214B300Y, RX1214B300YK, RX1214B350Y Datasheet download
Part Number: RX1214B300Y
MFG: PHILIPS
Package Cooled: TRANSISTOR
D/C: N/A
MFG:PHILIPS Package Cooled:TRANSISTOR D/C:N/A
RX1214B300Y, RX1214B300YK, RX1214B350Y Datasheet download
MFG: PHILIPS
Package Cooled: TRANSISTOR
D/C: N/A
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Datasheet: RX1214B300Y
File Size: 76693 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Datasheet: RX1000
File Size: 328779 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: RX1214B350Y
File Size: 93822 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | - | 65 | V |
VCES | collector-emitter voltage | RBE =0 Ω | - | 60 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current (DC) | tp 150 µs; =5% | - | 21 | A |
Ptot | total power dissipation |
tp 150 µs; =5%; Tmb =75 |
- | 570 | W |
Tstg | storage temperature | -65 | +200 | ||
Tj | operating junction temperature | - | 200 | ||
Tsld | soldering temperature | at 0.2 mm from case; t 10 s | - | 235 |
• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output matching networks for an easy circuit design.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.
· Suitable for short and medium pulse applications up to 1 ms/10%
· Internal input prematching networks allow an easier design of circuits
· Diffused emitter ballasting resistors improve ruggedness
· Interdigitated emitter-base structure provides high emitter efficiency
· Gold metallization with barrier realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and reduces thermal resistance.
Common base, class C, broadband, pulsed power amplifiers for L-Band radar applications in the 1.2 to 1.4 GHz band. Also suitable for medium pulse, heavy duty operation within this band.