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RN1001, RN1002, RN1003

Table of contents:
Info of RN1001
Info of RN1002
Info of RN1003

RN1001, RN1002, RN1003 Selling Leads, Datasheet

MFG:TOSHIBA Package Cooled:Toshiba

RN1001, RN1002, RN1003 Datasheet download

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Part Number: RN1001

MFG: TOSHIBA

Package Cooled: Toshiba

D/C:

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RN1001 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage	RN1001~1006	V_CBO	50	V
Collector-emitter voltage	RN1001~1006	V_CEO	50	V
Emitter-base voltage	RN1001~1004	V_EBO	10	V
Emitter-base voltage	RN1005,1006	V_EBO	5	V
Collector current	RN1001~1006	I_C	100	mA
Collector power dissipation		P_C	400	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

RN1001 Typical Application

·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Complementary to RN2001~RN2006

RN1002 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage	RN1001~1006	V_CBO	50	V
Collector-emitter voltage	RN1001~1006	V_CEO	50	V
Emitter-base voltage	RN1001~1004	V_EBO	10	V
Emitter-base voltage	RN1005,1006	V_EBO	5	V
Collector current	RN1001~1006	I_C	100	mA
Collector power dissipation		P_C	400	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

RN1002 Typical Application

·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Complementary to RN2001~RN2006

RN1003 Maximum Ratings

Characteristic		Symbol	Rating	Unit
Collector-base voltage	RN1001~1006	V_CBO	50	V
Collector-emitter voltage	RN1001~1006	V_CEO	50	V
Emitter-base voltage	RN1001~1004	V_EBO	10	V
Emitter-base voltage	RN1005,1006	V_EBO	5	V
Collector current	RN1001~1006	I_C	100	mA
Collector power dissipation		P_C	400	mW
Junction temperature		T_j	150
Storage temperature range		T_stg	−55~150

RN1003 Typical Application

·With built-in bias resistors
·Simplify circuit design
·Reduce a quantity of parts and manufacturing process
·Complementary to RN2001~RN2006

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