RFV10N50, RFV10N50BE, RFW2N06RLE Selling Leads, Datasheet
MFG:Intersil Package Cooled:7850 D/C:08+/09+
RFV10N50, RFV10N50BE, RFW2N06RLE Datasheet download
Part Number: RFV10N50
MFG: Intersil
Package Cooled: 7850
D/C: 08+/09+
RFV10N50, RFV10N50BE, RFW2N06RLE
- Table of contents:
Info of RFV10N50
Info of RFV10N50BE
Info of RFW2N06RLE
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About RFV10N50
PDF/DataSheet Download
Datasheet: RFV10N50
File Size: 67959 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFV10N50BE
PDF/DataSheet Download
Datasheet: RFV10N50BE
File Size: 67959 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
About RFW2N06RLE
PDF/DataSheet Download
Datasheet: RFW2N06RLE
File Size: 42537 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
RFV10N50BE General Description
The RFV10N50BE is an N-Channel fast switching MOSFET transistor that is designed for switching regulators, inverters and motor drivers. The RFV10N50BE is a monolithic structure incorporating a high voltage, high current MOSFET, a control MOSFET and ESD protection diodes. As indicated in the symbol to the right, the turn-on of the main MOSFET is controlled by Gate 1 (G1). The control MOSFET, controlled by Gate 2 (G2), is distributed throughout the structure. Gate 2 provides a very low impedance and inductive path to rapidly discharge the gate of the main MOSFET. Gate 2 affords very fast turn-off (typically less than 25ns) when desired. A separate return connection, Source Kelvin (SK), is supplied for the gate drive circuit to avoid voltage induced transients from the output circuit during switching. The RFV10N50BE can be operated directly from integrated circuits.
RFV10N50BE Maximum Ratings
Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS 500 V
Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS +14, -0.3 V
Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS +14, -0.3 V
Electrostatic Discharge Rating, MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . . . . . . ESD 2 KV
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 10 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 25 A
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Refer to UIS Curve
Control FET Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IAS 1.5 A
Control FET Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 50 mJ
Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 156 W
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 W/o C
Control FET Power Dissipation
TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 21 W
Derate Above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.17 W/o C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -55 to +150 o C
RFV10N50BE Features
• 10A, 500V
• rDS(ON) = 0.480W
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
• rDS(ON) = 0.480W
• Very Fast Turn-Off Characteristics
• Nanosecond Switching Speeds
• Electrostatic Discharge Protected
• UIS Rating Curve
• SOA is Power Dissipation Limited
• High Input Impedance
RFW2N06RLE Maximum Ratings
| RFW2N06RLE |
UNITS | |
| Drain to Source Breakdown Voltage (Note 1) . . . . VDS Drain to Gate Voltage (RGS = 20kW) (Note 1) . . . .VDGR Continuous Drain Current . . . . . . . . . . . .ID Pulsed Drain Current (Note 3) . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1). . . . . . . . . PD Linear Derating Factor (Figure 1. . . . . . . . Single Pulse Avalanche Energy Rating . . . . . . . EAS Electrostatic Discharge Rating, MIL-STD-883, Catagory B(2) .ESD Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . .Tpkg |
60 60 2 14 -5 to 10 1.09 0.009 Refer to UIS Curve 2 -55 to 150 300 260 |
V V A A V W W/o C KV o C o C o C |
RFW2N06RLE Features
• 2A, 60V
• rDS(on) = 0.160W
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
• rDS(on) = 0.160W
• UIS Rating Curve (Single Pulse)
• Design Optimized For 5 Volt Gate Drive
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Electrostatic Discharge Protected
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"
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