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This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT¤C223 package which is designed fo medium power surface mount applications.
PZT751T1 Maximum Ratings
Rating
Symbol
Value
Unit
Collector-emitter voltage
VCE0
60
Vdc
Collector-base voltage
VCB0
80
Vdc
Emitter-base voltage
VEB0
5.0
Vdc
Collector current
IC
2.0
Adc
Total power dissipation @ TA = 124 Derate above 25
PD
0.8 6.4
Watts mW/
Storage temperature range
Tstg
65 to 150
Junction temperature
Tj
150
PZT751T1 Features
· High Current: 2.0 Amp · The SOT-C223 Package can be soldered using wave or reflow · SOT-C223 package ensures level mounting, resulting in improved therma conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die · Available in 12 mm Tape and Reel Use PZT751T1 to order the 7 inch/1000 unit reel. Use PZT751T3 to order the 13 inch/4000 unit reel. · NPN Complement is PZT651T1
This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications.
PZT751T1G Maximum Ratings
Rating
Symbol
Value
Unit
Collector-emitter voltage
VCE0
60
Vdc
Collector-base voltage
VCB0
80
Vdc
Emitter-base voltage
VEB0
5.0
Vdc
Collector current
IC
2.0
Adc
Total power dissipation @ TA = 124(1) Derate above 25
PD
0.8 6.4
W mW/
Storage temperature range
Tstg
65 to 150
Junction temperature
Tj
150
PZT751T1G Features
• High Current: 2.0 A • The SOT−223 Package can be soldered using wave or reflow. • SOT−223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die • NPN Complement is PZT651T1 • Pb−Free Package is Available
PZTA06 Parameters
Technical/Catalog Information
PZTA06
Vendor
Fairchild Semiconductor (VA)
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
500mA
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Frequency - Transition
100MHz
Current - Collector Cutoff (Max)
100nA
Mounting Type
Surface Mount
Package / Case
SOT-223
Packaging
Cut Tape (CT)
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
PZTA06 PZTA06 PZTA06CT ND PZTA06CTND PZTA06CT
PZTA06 Maximum Ratings
Symbol
Parameter
Value
Units
VCES
Collector-Emitter Voltage
80
V
VCBO
Collector-Base Voltage
80
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.