DescriptionThe PZT 3904 is a NPN Silicon Switching Transistor.Features of the PZT 3904 are:(1)High DC current gain 0.1 mA to 100 mA;(2)Low collector-emitter saturation voltage;(3)Complementary type: PZT 3906 (PNP).The absolute maximum ratings of the PZT 3904 can be summarized as:(1)Collector-emitt...
PZT 3904: DescriptionThe PZT 3904 is a NPN Silicon Switching Transistor.Features of the PZT 3904 are:(1)High DC current gain 0.1 mA to 100 mA;(2)Low collector-emitter saturation voltage;(3)Complementary type:...
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The PZT 3904 is a NPN Silicon Switching Transistor.Features of the PZT 3904 are:(1)High DC current gain 0.1 mA to 100 mA;(2)Low collector-emitter saturation voltage;(3)Complementary type: PZT 3906 (PNP).
The absolute maximum ratings of the PZT 3904 can be summarized as:(1)Collector-emitter voltage:40V;(2)Collector-base voltage:60V;(3)Emitter-base voltage:6V;(4)Collector current:200 mA;(5)Total power dissipation, TS = 72°C:1.5 W;(6)Junction temperature:150 °C;(7)Storage temperature range: 65 . + 150°C.
The electrical characteristics at TA=25 °C (unless otherwise specified) of the PZT 3904 can be summarized as:(1)Collector-emitter breakdown voltage IC = 1 mA, IB = 0:40V;(2)Collector-base breakdown voltage IC = 10 mA, IB = 0:60V;(3)Emitter-base breakdown voltage IE = 10 mA, IC = 0:6V;(4)Collector-base cutoff current VCB = 30 V, IE = 0:50nA;(5)Collector-emitter cutoff current VCE = 30 V, VBE = 0.5 V:50nA;(6)Base-emitter cutoff current VCE = 30 V, VBE = 0.5 V:50nA;(7)DC current gain:40(IC = 0.1 mA, VCE = 1 V),70(IC = 1 mA, VCE = 1 V),100 to 300(IC = 10 mA, VCE = 1 V),60(IC = 50 mA, VCE = 1 V),30(IC = 100 mA, VCE = 1 V);(8)Collector-emitter saturation voltage:0.2V(IC = 10 mA, IB = 1 mA),0.3V(IC = 50 mA, IB = 5 mA);(9)Base-emitter saturation voltage:0.85V(IC = 10 mA, IC = 1 mA),0.95V(IC = 50 mA, IC = 5 mA).