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NPN silicon planar epitaxial microwave power transistor in a metal ceramic SOT440A flange package with base connected to the flange.
PTB23005X Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
-
40
V
VCES
collector-emitter voltage
RBE = 0W
-
40
V
VEBO
emitter-base voltage
open collector
-
15
V
IC
collector current (DC)
PTB23001X
PTB23003X
PTB23005X
-
-
-
0.25
0.5
0.75
A
A
A
Ptot
total power dissipation
PTB23001X
PTB23003X
PTB23005X
Tmb = 75 °C; f > 1 MHz
-
-
-
4.2
7.6
8.7
W
W
W
Tstg
storage temperature
-65
+200
°C
Tj
operating junction temperature
-
200
°C
Tsld
soldering temperature
t 10 s; note 1
-
235
°C
PTB23005X Features
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR · Interdigitated structure provides high emitter efficiency · Multicell geometry gives good balance of dissipated power and low thermal resistance · Localized thick oxide auto-alignment process and gold sandwich metallization ensure an optimum temperature profile and excellent performance and reliability.
PTB23005X Typical Application
Common-base, class B power amplifiers up to 4.2 GHz.