PTB 20004

Features: 50 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit Collector-emitter voltage VCER 40 Vdc Collector-Base Voltage VCBO 50 Vdc...

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SeekIC No. : 004466695 Detail

PTB 20004: Features: 50 Watts, 860900 MHz Class AB Characteristics 50% Collector Efficiency at 50 Watts Gold Metallization Silicon Nitride PassivatedSpecifications Parameter Symbol Rating Unit ...

floor Price/Ceiling Price

Part Number:
PTB 20004
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

50 Watts, 860900 MHz
Class AB Characteristics
50% Collector Efficiency at 50 Watts
Gold Metallization
Silicon Nitride Passivated



Specifications

 Parameter

 Symbol

Rating 

 Unit

 Collector-emitter voltage

 VCER

40

 Vdc

Collector-Base Voltage

 VCBO

50

Vdc

 Emitter-Base Voltage (collector open)

VEBO

 4.0

Vdc

Collector Current (continuous)

 IC

10.0

 Adc

Total Device Dissipation at Tflange = 25° CAbove 25°C derate by

 PD

1 75

1.0

Watts

W/°C

 Storage Temperature Range

 Tstg

40 to +150

 °C

 Thermal Resistance (Tflange = 70° C)

 RqJC

 1.0

°C/W




Description

The PTB 20004 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 50 watts minimum output power, PTB 20004 may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.




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