PHK4NQ10T/T3, PHK5NQ15T, PHK5NQ15T518 Selling Leads, Datasheet
MFG:593 Package Cooled:SOP8 D/C:08+
PHK4NQ10T/T3, PHK5NQ15T, PHK5NQ15T518 Datasheet download
Part Number: PHK4NQ10T/T3
MFG: 593
Package Cooled: SOP8
D/C: 08+
MFG:593 Package Cooled:SOP8 D/C:08+
PHK4NQ10T/T3, PHK5NQ15T, PHK5NQ15T518 Datasheet download
MFG: 593
Package Cooled: SOP8
D/C: 08+
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PDF/DataSheet Download
Datasheet: PHK04P02T
File Size: 111941 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHK5NQ15T
File Size: 240679 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHK04P02T
File Size: 111941 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability:PHK5NQ15T in SOT96-1 (SO8).
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDS |
drain-source voltage (DC) | Tj = 25 to 150 °C |
- |
200 |
V |
VDGR |
drain-gate voltage (DC) | Tj = 25 to 150 °C; RGS = 20 k |
- |
200 |
V |
VGS |
gate-source voltage (DC) |
- |
±20 |
V | |
ID |
drain current (DC) | Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 |
- |
5 |
A |
Tsp = 100 °C; VGS = 10 V; Figure 2 |
- |
3.23 |
A | ||
IDM |
peak drain current | Tsp = 25 °C; pulsed; tp 10 s;Figure 3 |
- |
20 |
A |
Ptot |
total power dissipation | Tsp = 25 °C; Figure 1 |
- |
62.5 |
W |
Tstg |
storage temperature |
-55 |
+150 |
°C | |
Tj |
junction temperature |
-55 |
+150 |
°C | |
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tsp = 25 °C |
- |
5 |
A |
ISM |
peak source (diode forward) current | Tsp = 25 °C; tp 10 s |
- |
20 |
A |