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NZT605, NZT651, NZT660

Table of contents:
Info of NZT605
Info of NZT651
Info of NZT660

NZT605, NZT651, NZT660 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT-223 D/C:2006

NZT605, NZT651, NZT660 Datasheet download

Five Points

Part Number: NZT605

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT-223

D/C: 2006

Description: TRANSISTOR PNP GP 60V SOT-223

Price Break

2500

Unit Price

.12070

Extended Price

301.75

(All prices are in USD) Prices for reference only

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NZT605 Parameters

Technical/Catalog Information	NZT605
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	110V
Current - Collector (Ic) (Max)	1.5A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 1A, 5V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A
Frequency - Transition	150MHz
Current - Collector Cutoff (Max)	10nA
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NZT605 NZT605

NZT605 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CEO	Collector-Emitter Voltage	110	V
V_CBO	Collector-Base Voltage	140	V
V_EBO	Emitter-Base Voltage	10	V
I_C	Collector Current - Continuous	1.5	A
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NZT651 Parameters

Technical/Catalog Information	NZT651
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	75 @ 50mA, 2V
Vce Saturation (Max) @ Ib, Ic	300mV @ 100mA, 1A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NZT651 NZT651

NZT651 General Description

This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 4P.

NZT651 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CEO	Collector-Emitter Voltage	60	V
V_CBO	Collector-Base Voltage	80	V
V_EBO	Emitter-Base Voltage	5.0	V
I_C	Collector Current - Continuous	4.0	A
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NZT660 Parameters

Technical/Catalog Information	NZT660
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	2W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	1.25V @ 100mA, 1A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NZT660 NZT660

NZT660 Maximum Ratings

Symbol	Parameter	Value	Units
V_CEO	Collector-Emitter Voltage	60	V
V_CBO	Collector-Base Voltage	80	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current - Continuous	3	A
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

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