NTE900, NTE909, NTE916 Selling Leads, Datasheet
MFG:NTE D/C:08+
NTE900, NTE909, NTE916
- Table of contents:
Info of NTE900
Info of NTE909
Info of NTE916
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About NTE0303M
PDF/DataSheet Download
Datasheet: NTE0303M
File Size: 382090 KB
Manufacturer: CANDD [C&D Technologies]
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About NTE909
PDF/DataSheet Download
Datasheet: NTE909
File Size: 36242 KB
Manufacturer: NTE [NTE Electronics]
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About NTE916
PDF/DataSheet Download
Datasheet: NTE916
File Size: 31456 KB
Manufacturer: NTE [NTE Electronics]
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NTE909 General Description
These devices are monolithic operational amplifiers intended for generalpurpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the classB output stage gives a large output capability with minimum power drain.
External components are used to frequency compensate the amplifier. Although the unitygain compensation
network specified will make the amplifiers unconditionally stable in all feedback configurations, compensation can be tailored to optimize highfrequency performance for any gain setting.
The fact that the amplifiers are built on a single silicon chip provides low offset and temperature drift at minimum cost. It also ensures negligble drift due to temperature gradients in the vicinity of the amplifier.
NTE909 Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18V
Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Output ShortCircuit Duration (TA = +25) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 seconds
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300
Note 1 For operating at elevated temperatures, the device must be derated based on a 100 maximum junction temperature and a thermal resistance 150/W junction to ambient or 45/W, junction to case for the metal can package.
Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Output ShortCircuit Duration (TA = +25) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 seconds
Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300
Note 1 For operating at elevated temperatures, the device must be derated based on a 100 maximum junction temperature and a thermal resistance 150/W junction to ambient or 45/W, junction to case for the metal can package.
NTE909 Connection Diagram
NTE916 General Description
The NTE916 is a high current transistor array in a 16Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a commonemitter configuration designed for directly driving sevensegment displays and lightemitting diodes (LED) displays.
This device is also well suited for a variety of other drive applications including relay control and thyristor firing.
NTE916 Maximum Ratings
Power Dissipation (Total Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW
Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Linearly Above 55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6.67mW/
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +125
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65° to +150
Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265
Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Linearly Above 55 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6.67mW/
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55° to +125
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65° to +150
Lead Temperature (During Soldering, 1/16" from case, 10sec max), TL . . . . . . . . . . . . . . . . . +265
NTE916 Features
` Seven Transistors Permit a Wide Range of Applications
` High Collector Current: IC = 100mA Max
` Low CollectorEmitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA
` High Collector Current: IC = 100mA Max
` Low CollectorEmitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA
NTE916 Connection Diagram
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