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NTE129, NTE130, NTE152

NTE129, NTE130, NTE152 Selling Leads, Datasheet

MFG:NT  Package Cooled:CAN3  D/C:04+

NTE129, NTE130, NTE152 Picture

NTE129, NTE130, NTE152 Datasheet download

Five Points

Part Number: NTE129

 

MFG: NT

Package Cooled: CAN3

D/C: 04+

 

 

 
 
 
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  • NTE0505M

  • Vendor: CDT Qty: 2000 Note: stock,TEL:86-0755-61329226,MSN:havinzhou@hotmail.com  Adddate: 2024-11-28
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  • Enoki Electronics Technology   China
    Contact: Mr.HavinZhou   MSN:havinzhou@hotmail.com
    Tel: 86-0755-82529412
    Fax: 86-0755-82529412
    (1)

About NTE129 (PNP)

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Datasheet: NTE129 (PNP)

File Size: 28472 KB

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  • NTE0505M

  • Vendor: CDT Qty: 2000 Note: stock,TEL:86-0755-61329226,MSN:havinzhou@hotmail.com  Adddate: 2024-11-28
  • Inquire Now
  • Enoki Electronics Technology   China
    Contact: Mr.HavinZhou   MSN:havinzhou@hotmail.com
    Tel: 86-0755-82529412
    Fax: 86-0755-82529412
    (1)

About NTE130

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Datasheet: NTE130

File Size: 25480 KB

Manufacturer: NTE [NTE Electronics]

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  • NTE0505M

  • Vendor: CDT Qty: 2000 Note: stock,TEL:86-0755-61329226,MSN:havinzhou@hotmail.com  Adddate: 2024-11-28
  • Inquire Now
  • Enoki Electronics Technology   China
    Contact: Mr.HavinZhou   MSN:havinzhou@hotmail.com
    Tel: 86-0755-82529412
    Fax: 86-0755-82529412
    (1)

About NTE152

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Datasheet: NTE152

File Size: 21853 KB

Manufacturer: NTE [NTE Electronics]

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NTE129 General Description

The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.

NTE129 Maximum Ratings

CollectorEmitter Voltage, VCEO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80V
CollectorBase Voltage, VCBO
NTE128  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .140V
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .80V
EmitterBase Voltage, VEBO
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7V
NTE129  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . .5V
Continuous Collector Current, IC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1A
Total Device Dissipation (TA = +25°C), PD
NTE128  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . .0.8W
Derate Above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.6mW/°C
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . 1.25W
Derate Above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7.15mW/°C
Total Device Dissipation (TC = +25°C), PD
NTE128  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  . . . .5W
Derate Above 25°C  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28.6mW/°C
NTE129  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40mW/°C
Operating Junction Temperature Range, TJ  . . . . . . . . . . . . . . . . . . .65° to +200°C
Storage Temperature Range, Tstg  . . . . . . . . . . . . . . . . . . . . . . . . . .65° to +200°C
Thermal Resistance, JunctiontoCase, RthJC
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .20°C/W
Thermal Resistance, JunctiontoAmbient, RthJA
NTE128 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .89.5°C/W
NTE129 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .140°C/W
Lead Temperature (During Soldering, 1/16" from case, 60sec max), T  . . . .+300°C
Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP).

NTE152 General Description

The NTE152 (NPN) and NTE153 (PNP) are silicon complementary transistors in a standard TO220 type package designed for general purpose medium power switching and amplifier applications.

NTE152 Maximum Ratings

CollectorBase Voltage, VCBO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . .90V
CollectorEmitter Voltage, VCEO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .90V
EmitterBase Voltage, VEBO  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5A
Collector Current, IC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . .  . 4A
Emitter Current, IE  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Base Current, IB  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . . . . . . . .3A
Collector Power Dissipation (TC = +25°C), PC  . . . . . . . . . . . . . . . . . . . . . . . . . . .40W
Junction Temperature, TJ  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
Storage Temperature Range, Tstg  . . . . . . . . . . . . . . . . .. . . . . . . . .55° to +150°C
Note 1. NTE152MP is a matched pair of NTE152 with their DC Current Gain (hFE) matched to with in10% of each other.
Note 2. Matched complementary pairs are available upon request (NTE55MCP). Matched complementary pairs have their gain specification (hFE) matched to within 10% of each other.

NTE152 Features

·Good Linearity of hFE

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