NTE263, NTE2732A, NTE278 Selling Leads, Datasheet
MFG:NTE Package Cooled:00+ D/C:TO220
NTE263, NTE2732A, NTE278 Datasheet download
Part Number: NTE263
MFG: NTE
Package Cooled: 00+
D/C: TO220
NTE263, NTE2732A, NTE278
- Table of contents:
Info of NTE263
Info of NTE2732A
Info of NTE278
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About NTE2631
PDF/DataSheet Download
Datasheet: NTE2631
File Size: 24796 KB
Manufacturer: NTE [ NTE Electronics ]
Download : Click here to Download
About NTE2732A
PDF/DataSheet Download
Datasheet: NTE2732A
File Size: 46834 KB
Manufacturer: NTE [NTE Electronics]
Download : Click here to Download
About NTE278
PDF/DataSheet Download
Datasheet: NTE278
File Size: 23655 KB
Manufacturer: NTE [NTE Electronics]
Download : Click here to Download
NTE2732A General Description
The NTE2732A is a 32,768bits ultraviolet erasable and electrically programmable readonly memory (EPROM) organized as 4,096 words by 8 bits and manufactured using NChannel SiGate MOS processing. With its single +5V power supply and with an access time of 200ns, the NTE2732A is ideal for use with high performance +5V microprocessors such as the NTE3880.
The NTE2732A has an important feature which is the separate output control, Output Enable (OE) from the Chip Enable control (CE). The OE control eliminates bus contention in multiple bus microprocessor systems.
The NTE2732A also features an standby mode which reduces the power dissipation without increasing access time. The active current is 125mA while the maximum standby mode is achieved by applying a TTLhigh signal to the CE input.
NTE2732A Maximum Ratings
All Input or Output Voltages with respect to GND, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . .+6 to 0.6V
Supply Voltage with respect to GND during Program, Vpp . . . . . . . . . . . . . . . . . . . . . . .+22 to 0.6V
Ambient Temperature under Bias, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 to +80
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .65 to +125
Note 1. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Supply Voltage with respect to GND during Program, Vpp . . . . . . . . . . . . . . . . . . . . . . .+22 to 0.6V
Ambient Temperature under Bias, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 to +80
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . .65 to +125
Note 1. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
NTE2732A Features
* Fast Access Time: 200ns Max
* 0 to +70 Standard Temperature Range
* Single +5V Power Supply
* Low Standby Current (35mA Max)
* Inputs and Outputs TTL Compatible During Read and Program
* Completely Static
* 0 to +70 Standard Temperature Range
* Single +5V Power Supply
* Low Standby Current (35mA Max)
* Inputs and Outputs TTL Compatible During Read and Program
* Completely Static
NTE2732A Connection Diagram
NTE278 General Description
The NTE278 is a silicon NPN transistor in a TO39 type package designed specifically for broadband applications requiring good linearity. Usable as a high frequency current mode switch to 200mA.
NTE278 Maximum Ratings
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . . . .400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400mA
Total Device Dissipation (TC = +75, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... . . . . .2.5W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... .. . .20mW/
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .65 to +200
Note 1. Total Device Dissipation at TA = +25is 1 Watt.
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . .3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .... . . . . . . .400mA
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400mA
Total Device Dissipation (TC = +75, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..... . . . . .2.5W
Derate Above 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...... .. . .20mW/
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .65 to +200
Note 1. Total Device Dissipation at TA = +25is 1 Watt.
NTE278 Features
* Low Noise Figure: NF = 3.0dB Typ @ f = 200MHz
* High CurrentGain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
* High CurrentGain Bandwidth Product: fT = 1200MHz Min @ IC = 50mA
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